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Nanopipes in GaN: photo-etching and TEM study

Published online by Cambridge University Press:  15 July 2004

S. Lazar ,
J L Weyher ,
L. Macht ,
F. D. Tichelaar  and
H. W. Zandbergen
S. Lazar*
Affiliation:
National Center for HREM, Kavli Institute of Nanoscience Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
J L Weyher
Affiliation:
Experimental Solid State Physics III, RIM, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
L. Macht
Affiliation:
Experimental Solid State Physics III, RIM, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
F. D. Tichelaar
Affiliation:
National Center for HREM, Kavli Institute of Nanoscience Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
H. W. Zandbergen
Affiliation:
National Center for HREM, Kavli Institute of Nanoscience Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
*
S.Lazar@tnw.tudelft.nl
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Abstract

Photochemical (PEC) etching and transmission electron microscopy (TEM) have been used to study the defects in hetero-epitaxial GaN layers. TEM proved that PEC etching reveals not only dislocations but also nanopipes in the form of protruding, whisker-like etch features. It is shown by diffraction contrast techniques that the nanopipes are screw coreless dislocations. An example is shown of the transformation of a normal full-core screw dislocation into a nanopipe. The PEC/TEM experiments indicate the presence of electrically active (recombinative) species in the vicinity of the nanopipes.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 275 - 278
Copyright
© EDP Sciences, 2004

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References

Ponce, F. A., Cherns, D., Young, W. T., Steeds, J. W., Appl. Phys. Lett. 69, 770 (1997) CrossRef
Qian, W., Skowronski, M., Doverspike, K., Rowland, L. B., Gaskill, D. K., J. Cryst. Growth 151, 396 (1995) CrossRef
Cherns, D., Young, W. T., Ponce, F. A., Mater. Sci. Eng. B 50, 76 (1997) CrossRef
Vennegues, P., Beaumont, B., Vaille, M., Gibart, P., Appl. Phys. Lett. 70, 2434 (1997) CrossRef
Cherns, D., Young, W. T., Steeds, J. W., Ponce, F. A., Nakamura, S., J. Cryst. Growth 178, 201 (1997) CrossRef
Liliental-Weber, Z., Chen, Y., Ruvimov, S., Washburn, J., Phys. Rev. Lett. 79, 2835 (1997) CrossRef
Shiojima, K., J. Vac. Sci. Technol. B 18, 37 (2000) CrossRef
Hong, S. H., Kim, B. J., Park, H. S., Park, Y., Yoon, S. Y., Kim, T. I., J. Cryst. Growth 191, 275 (1998) CrossRef
Iwaya, M., Takeuchi, T., Yamaguchi, S., Wetzel, C., Amano, H., Akasaki, I., Jpn J. Appl. Phys. 37, L316 (1998) CrossRef
Youtsey, C., Romano, L. T., Adesida, I., Appl. Phys. Lett. 73, 797 (1998) CrossRef
Weyher, J. L., Brown, P. D., Rouviere, J. L., Wosinski, T., Zauner, A. R. A., Grzegory, I., J. Cryst. Growth 210, 151 (2000) CrossRef
Kamler, G., Weyher, J. L., Grzegory, I., Jezierska, E., Wosinski, T., J. Cryst. Growth 246, 21 (2002) CrossRef
Youtsey, C., Romano, L. T., Molnar, R. J., Adesida, I., Appl. Phys. Lett. 74, 3537 (1999) CrossRef
Visconti, P., Huang, D., Reshchikov, M. A., Yun, F., Cingolani, R., Smith, D. J., Jasinski, J., Swider, W., Liliental-Weber, Z., Morkoç, H., Mater. Sci. Eng. B 93, 229 (2002) CrossRef
Weyher, J. L., Tichelaar, F. D., Zandbergen, H. W., Macht, L., Hageman, P. R., J. Appl. Phys. 90, 6105 (2001) CrossRef
Weyher, J. L., Macht, L., Tichelaar, F. D., Zandbergen, H. W., Hageman, P. R., Larsen, P. K., Mater. Sci. Eng. B 91–92, 280 (2002) CrossRef
de Theije, F. K., Zauner, A. R. A., Hageman, P. R., van Enckevort, W. J. P., Larsen, P. K., J. Cryst. Growth 197, 37 (1999) CrossRef
D. B. Williams, C. B. Carter, Transmission Electron Microscopy textbook for material sciences (Plenum Press, New York, 1996)
Chien, F. R., Ning, X. J., Stemmer, S., Pirouz, P., Bremser, M. D., Davis, R. F., Appl. Phys. Lett. 68, 2678 (1996) CrossRef
Ruvimov, S., Liliental-Weber, Z., Dieker, C., Koike, J. W. M., Amano, H., Akasaki, I., Mat. Res. Soc. Symp. Proc. 468, 287 (1997) CrossRef
Elsner, J., Jones, R., Haugk, M., Gutierrez, R., Frauenheim, Th., Öberg, S., Briddon, P. R., Appl. Phys. Lett. 73, 3530 (1998) CrossRef
J. Elsner, A. Th. Blumenau, Th. Frauenheim, R. Jones, M. I. Heggie, MRS Internet J. Nitride Semicond. Res. 5S1, W9.3 (2000)