Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-25T18:50:28.177Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetoelectric effect in ferromagnetic-ferroelectric tunneling junctions

Published online by Cambridge University Press:  18 August 2011

L.B. Zhang ,
M.H. Tang ,
J.C. Li ,
Y.G. Xiao ,
Z.Q. Zeng ,
Z.P. Wang ,
G.Y. Wang ,
S.B. Yang ,
X.L. Xu  and
B. Jiang
...Show all authors
L.B. Zhang
Affiliation:
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, P.R. China
M.H. Tang*
Affiliation:
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, P.R. China
J.C. Li
Affiliation:
ASIC R&D Center, School of Electronic Science and Engineering of National University of Defense Technology, Changsha, Hunan 410073, P.R. China
Y.G. Xiao
Affiliation:
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, P.R. China
Z.Q. Zeng
Affiliation:
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, P.R. China
Z.P. Wang
Affiliation:
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, P.R. China
G.Y. Wang
Affiliation:
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, P.R. China
S.B. Yang
Affiliation:
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, P.R. China
X.L. Xu
Affiliation:
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, P.R. China
B. Jiang
Affiliation:
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, P.R. China
J. He
Affiliation:
Pacific Geoscience Centre, Geological Survey of Canada, 9860 West Saanich Road, Sidney, British Columbia, Canada V8L 4B2
*
ae-mail: mhtang@xtu.edu.cn
Get access

Abstract

The interfacial magnetoelectric (ME) effect in ferromagnetic-ferroelectric (FM-FE) tunneling junctions was investigated in this work. We found that the tunneling magnetoresistance (TMR) changes with the reversing of the electric polarization of the FE barrier. The theoretical results also indicated that TMR is strongly dependent on the electric polarization, the exchange splitting energy, the screening lengths in the electrodes, and the dielectric constant of the FE barrier layer. These results may provide some insights into switching magnetization electrically for spintronics and presenting independent tunneling states in a single junction for multi-value storage memory applications.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 55 , Issue 3 , September 2011 , 30601
Copyright
© EDP Sciences, 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Wang, J., Ju, S., Li, Z.Y., J. Phys. D: Appl. Phys. 43, 135003 (2010)CrossRef
Zhuravlev, M.Y., Maekawa, S., Tsymbal, E.Y., Phys. Rev. B 81, 104419 (2010)CrossRef
Hehn, M., Malinowski, G., Sajieddine, M., Jouguelet, E., Schuhl, A., Eur. Phys. J. Appl. Phys. 28, 79 (2004)CrossRef
Velev, J.P., Duan, C.G., Burton, J.D., Smogunov, A., Niranjan, M.K., Tosatti, E., Jaswal, S.S., Tsymbal, E.Y., Nano Lett. 9, 427 (2009)CrossRef
Ramesh, R., Nat. Mater. 9, 380 (2010)CrossRef
Zhuravlev, M.Y., Wang, Y., Maekawa, S., Tsymbal, E.Y., Appl. Phys. Lett. 95, 052902 (2009)CrossRef
Yang, F., Tang, M.H., Ye, Z., Zhou, Y.C., Zheng, X.J., Tang, J.X., Zhang, J.J., He, J., J. Appl. Phys. 102, 044504 (2007)CrossRef
Gajek, M., Bibes, M., Fusil, S., Bouzehouane, K., Fontcuberta, J., Barthèlèmy, A., Fert, A., Nat. Mater. 6, 296 (2007)CrossRef
Zhang, L.B., Tang, M.H., Yang, F., Eur. Phys. J. Appl. Phys. 51, 10604 (2010)CrossRef
Burton, J.D., Tsymbal, E.Y., Phys. Rev. B 80, 174406 (2009)CrossRef
Zhuravlev, M.Y., Vedyayev, A.V., Tsymbal, E.Y., J. Phys: Condens. Matter 22, 352203 (2010)
Malashevich, A., Vanderbilt, D., Eur. Phys. J. B 71, 345 (2009)CrossRef
Zhuravlev, M.Y., Jaswal, S.S., Tsymbal, E.Y., Sabirianov, R.F., Appl. Phys. Lett. 87, 222114 (2005)CrossRef
Duan, C.G., Jaswal, S.S., Tsymbal, E.Y., Phys. Rev. Lett. 97, 047201 (2006)CrossRef
Niranjan, M.K., Velev, J.P., Duan, C.G., Jaswal, S.S., Tsymbal, E.Y., Phys. Rev. B 78, 104405 (2008)CrossRef
Garcia, V., Bibes, M., Bocher, L., Valencia, S., Kronast, F., Crassous, A., Moya, X., Enouz-Vedrenne, S., Gloter, A., Imhoff, D., Deranlot, C., Mathur, N.D., Fusil, S., Bouzehouane, K., Barthélémy, A., Science 327, 1106 (2010)CrossRef
Zhuravlev, M.Y., Sabirianov, R.F., Jaswal, S.S., Tsymbal, E.Y., Phys. Rev. Lett. 94, 246802 (2005)CrossRef
Shin, J.C., Hwang, C.S., Kim, H.J., Park, S.O., Appl. Phys. Lett. 75, 3411 (1999)CrossRef
Kohlstedt, H., Pertsev, N.A., Contreras, J.R., Waser, R., Phys. Rev. B 72, 125341 (2005)CrossRef
Duke, C.B., Tunnelling in Solids, 1st edn. (Academic Press, New York, 1969)Google Scholar
TMR (2010), http://www.wikipedia.org
Ju, S., Cai, T.Y., Guo, G.Y., Li, Z.Y., Phys. Rev. B 75, 064419 (2007)CrossRef
Contreras, J.R., Kohlstedt, H., Poppe, U., Waser, R., Buchal, C., Pertsev, N.A., Appl. Phys. Lett. 83, 4595 (2003)CrossRef
Zhang, S.F., Phys. Rev. Lett. 83, 640 (1999)CrossRef