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Low temperature characteristics of AlGaN/GaN high electron mobility transistors

Published online by Cambridge University Press:  28 September 2011

D.F. Lin ,
X.L. Wang ,
H.L. Xiao ,
C.M. Wang ,
L.J. Qiang ,
C. Feng ,
H. Chen ,
Q.F. Hou ,
Q.W. Deng  and
Y. Bi
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D.F. Lin*
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
X.L. Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P.O. Box 912, Beijing 100083, P.R. China
H.L. Xiao
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
C.M. Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
L.J. Qiang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
C. Feng
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
H. Chen
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Q.F. Hou
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Q.W. Deng
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Y. Bi
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
H. Kang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
*
ae-mail: dflin@semi.ac.cn
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Abstract

The I-V characteristics of AlGaN/GaN high electron mobility transistors in the temperature range between 100 K and 300 K are studied. It is found that both the maximum drain-source current and transconductance decrease with the increase of temperature. Decrease of the electron mobility with increasing temperature is considered to be the main cause for that condition. The threshold voltage shows a forward shift, which can be explained by the increase of Schottky barrier with increasing temperature. It is found that at VGS = 0 V the drain-source current reduces with the ascending temperature, which should be due to the variation of the electron mobility with the temperature. While at VGS = −5 V the drain-source current is found to increase with the ascending temperature, it is suggested to be caused by the positive temperature coefficient of the electron transport in the depleted region.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 56 , Issue 1: Topical Issue: 5th Colloquium Interdisciplinary in Instrumentation (C2I) 2010 , October 2011 , 10101
Copyright
© EDP Sciences, 2011

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