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Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

Published online by Cambridge University Press:  15 July 2004

Xiaoling Ye ,
Y. H. Chen ,
Bo Xu ,
Y. P. Zeng  and
Z. G. Wang
Xiaoling Ye*
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China
Y. H. Chen
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China
Bo Xu
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China
Y. P. Zeng
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China
Z. G. Wang
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China
*
xlye@red.semi.ac.cn
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Abstract

The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH$\rightarrow$1E and 1LH$\rightarrow$1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 297 - 300
Copyright
© EDP Sciences, 2004

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