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Improved colour stability of phosphorescent white organic light-emitting devices by manipulating electron transport

Published online by Cambridge University Press:  17 June 2014

Xu Wang ,
Juan Zhao ,
Jian Zhong  and
Junsheng Yu
Xu Wang
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P.R. China
Juan Zhao
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P.R. China
Jian Zhong
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P.R. China
Junsheng Yu*
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P.R. China
*
aemail: jsyu@uestc.edu.cn
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Abstract

Phosphorescent white organic light-emitting devices (WOLEDs) with a multilayer structure were fabricated, and colour stability was studied by manipulating electron transport property of the hole-blocking layer 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene (TPBi) and the electron transporting layer 4,7-diphenyl-1,10-phenanthroline (Bphen). With 20 nm thick TPBi and 20 nm Bphen tailoring electron transport, the WOLED yielded a slight Commission Internationale de l’Eclairage coordinates variation of (−0.003, 0.007) in a wide range of bias voltages. Additionally, a peak current efficiency of 32.4 cd/A and a peak external quantum efficiency of 12.7% were also realised. It was found that the enhancement of colour stability was due to optimisation of the electron transport, by adjusting the thicknesses of TPBi and Bphen to improve the charge carrier balance.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 67 , Issue 1 , July 2014 , 10101
Copyright
© EDP Sciences, 2014

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References

Wang, Q., Ding, J.Q., Ma, D.G., Cheng, Y.X., Wang, L.X., Jing, X.B., Wang, F.S., Adv. Funct. Mater. 19, 84 (2011)CrossRef
Liu, B.Q., Tao, H., Su, Y.J., Gao, D.Y., Lan, L.F., Zou, J.H., Peng, J.B., Chin. Phys. B 22, 077303 (2013)CrossRef
D’Andrade, B.W., Forrest, S.R., Adv. Mater. 16, 1585 (2004)CrossRef
Li, Y., Zhang, W., Zhang, L.T., Wen, X.M., Yin, Y.M., Liu, S.H., Xie, W.F., Zhao, H.Y., Tao, S.L., Org. Electr. 14, 3201 (2013)CrossRef
Peng, T., Li, G.M., Ye, K.Q., Huang, S., Wu, Y., Liu, Y., Wang, Y., Org. Electr. 14, 1649 (2013)CrossRef
Liu, S.Q., Yu, J.S., Ma, Z., Zhao, J., J. Lumin. 134, 665 (2013)CrossRef
Jiang, W., Duan, L., Qiao, J., Dong, G.F., Wang, L.D., Qiu, Y., Org. Lett. 13, 3146 (2011)CrossRef
Reineke, S., Lindner, F., Schwartz, G., Seidler, N., Walzer, K., Lussem, B., Leo, K., Nature 459, 234 (2008)CrossRef
D’Andrade, B.W., Esler, J., Lin, C., Weaver, M., Brown, J., SID Symp. Digest Tech. Papers 39, 940 (2008)CrossRef
Jou, J.H., Chen, P.W., Chen, Y.L., Jou, Y.C., Tseng, J.R., Wu, R.Z., Hsieh, C.Y., Hsieh, Y.C., Joers, P., Chen, S.H., Wang, Y.S., Tung, F.C., Chen, C.C., Wang, C.C., Org. Electr. 14, 47 (2013)CrossRef
Qu, B., Chen, Z.J., Xu, F., Cao, H.Y., Lan, Z.H., Wang, Z.Y., Gong, Q.H., Org. Electr. 8, 529 (2007)CrossRef
Ho, C.L., Lin, M.F., Wong, W.Y., Wong, W.K., Chen, C.H., Appl. Phys. Lett. 92, 083301 (2008)CrossRef
Kohnen, A., Irion, M., Gather, M.C., Rehmann, N., Zacharias, P., Meerholz, K., J. Mater. Chem. 20, 3301 (2010)CrossRef
Reineke, S., Walzer, K., Leo, K., Phys. Rev. B 75, 125328 (2007)CrossRef
Yang, H.S., Xie, W.F., Zhao, Y., Hou, J.Y., Liu, S.Y., Solid State Commun. 139, 468 (2006)CrossRef
Yang, H.S., Shi, Y.W., Zhao, Y., Hou, J.Y., Liu, S.Y., J. Lumin. 127, 367 (2007)CrossRef
Naka, S., Okada, H., Onnagawa, H., Tsutsui, T., Appl. Phys. Lett. 76, 197 (2000)CrossRef
Gebeyehu, D., Walzer, K., He, G., Pfeiffer, M., Leo, K., Brandt, J., Gerhard, A., Stößel, P., Vestweber, H., Synth. Met. 148, 205 (2005)CrossRef
Kim, S.Y., Jeong, W.I., Mayr, C., Park, Y.S., Kim, K.H., Lee, J.H., Moon, C.K., Brütting, W., Kim, J.J., Adv. Funct. Mater. 23, 3896 (2013)CrossRef
Zang, F.X., Sum, T.C., Huan, A.C.H., Li, T.L., Li, W.L., Zhu, F.R., Appl. Phys. Lett. 93, 023309 (2008)CrossRef
Song, D.D., Zhao, S.L., Luo, Y.C., Aziz, H., Appl. Phys. Lett. 97, 243304 (2010)CrossRef