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Fabrication, morphology and photoluminescence properties of GaN nanowires

Published online by Cambridge University Press:  13 June 2007

Huizhao Zhuang  and
Shoubin Xue
Huizhao Zhuang*
Affiliation:
Institute of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China
Shoubin Xue
Affiliation:
Institute of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China
*
zhuanghuizhao@sdnu.edu.cn
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Abstract

GaN nanowires were successfully synthesized on Si(111) substrates by ammoniating the Ga2O3/ZnO films at 900 °C. The structure, morphology and optical property of the as-prepared GaN nanowires were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared spectrum (FTIR) and fluorescence spectrophotometer. The results show that the GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm. The representative photoluminescence spectrum at room temperature exhibited a strong emission peak at 374.1 nm and two weak emission peaks at 437.4 nm and 473.3 nm. Finally, the growth mechanism is also briefly discussed.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 38 , Issue 3 , June 2007 , pp. 243 - 246
Copyright
© EDP Sciences, 2007

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