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Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers

Published online by Cambridge University Press:  15 July 2004

M. Pommiès ,
M. Avella ,
G. Patriarche ,
M. Bettiati ,
G. Hallais  and
J. Jiménez
M. Pommiès
Affiliation:
Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain
M. Avella
Affiliation:
Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain
G. Patriarche
Affiliation:
CNRS-LPN, Route de Nozay, 91460 Marcoussis, France
M. Bettiati
Affiliation:
Alcatel R&I, now with Avanex France, Route de Villejust, 91625 Nozay, France
G. Hallais
Affiliation:
Alcatel R&I, now with Avanex France, Route de Villejust, 91625 Nozay, France
J. Jiménez*
Affiliation:
Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain
*
jimenez@fmc.uva.es
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Abstract

The degradation behaviour of two InGaAs/AlGaAs laser structures differing only in the Zn doping concentration of the p+ GaAs contact layer has been compared. The ageing tests used in this comparison are performed on lasers with Anti-Reflection (AR) coatings on both facets, so as to increase the carrier density in the quantum well and the gradual degradation rate. This kind of ageing test has been discussed in a previous paper, where a possible effect of Zn diffusion was suspected. The defects generated during ageing are studied by Low Temperature (80 K)—Spectrally Resolved Cathodo-Luminescence (LT-SRCL), Cathodo-Luminescence Imaging (CLI) and Transmission Electron Microscopy (TEM). The impact of the acceptor concentration in the contact layer is thus clarified.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 465 - 468
Copyright
© EDP Sciences, 2004

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