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Conductivity in porous silicon*

Published online by Cambridge University Press:  15 May 1998

K. Borgi ,
K. Khirouni ,
H. Mâaref  and
J. C. Bourgoin
K. Borgi
Affiliation:
Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia
K. Khirouni
Affiliation:
Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia
H. Mâaref
Affiliation:
Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia
J. C. Bourgoin*
Affiliation:
Groupe de Physique des Solides, Universités Paris 6 et Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
*
bourgoin@gps.jussieu.fr
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Abstract

Admittance spectroscopy has been performed on Al dots deposited on porous Silicon grown on p+ substrates. They exhibit d.c. current-voltage characteristics of a metal-insulator-semiconductor structure containing a large concentration of localized states in the insulator. The admittance is composed of a frequency (ω) independent conductance while the reactance varies as ωs with s = 1. This strongly suggests that conduction through porous Silicon layers is governed by hopping between surface states.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 2 , Issue 2 , May 1998 , pp. 107 - 110
Copyright
© EDP Sciences, 1998

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Footnotes

*

This paper was presented at the "5es Journées Maghrébines sur les sciences des matériaux" held at Hammamet, the 8, 9 and 10 November 1996.

References

* This paper was presented at the "5es Journées Maghrébines sur les sciences des matériaux" held at Hammamet, the 8, 9 and 10 November 1996.