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Structural and morphological studies of GaN thin films grown on different oriented LiNbO3 substrates by MOVPE

Published online by Cambridge University Press:  25 July 2008

T. Moudakir
Affiliation:
Laboratoire Matériaux Optiques, Photonique et Systèmes, UMR CNRS 7132, University of Metz and Supélec, 2 rue E. Belin, 57070 Metz, France
G. Orsal*
Affiliation:
Laboratoire Matériaux Optiques, Photonique et Systèmes, UMR CNRS 7132, University of Metz and Supélec, 2 rue E. Belin, 57070 Metz, France
N. Maloufi
Affiliation:
Laboratoire d'Étude des Textures et Application aux Matériaux, UMR CNRS 7078, University of Metz, ISGMP, Île du Saulcy, 57045 Metz, France
A. A. Sirenko
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102, USA
S. Gautier
Affiliation:
Laboratoire Matériaux Optiques, Photonique et Systèmes, UMR CNRS 7132, University of Metz and Supélec, 2 rue E. Belin, 57070 Metz, France
M. Bouchaour
Affiliation:
Laboratoire Matériaux Optiques, Photonique et Systèmes, UMR CNRS 7132, University of Metz and Supélec, 2 rue E. Belin, 57070 Metz, France
S. Ould Saad
Affiliation:
Laboratoire Matériaux Optiques, Photonique et Systèmes, UMR CNRS 7132, University of Metz and Supélec, 2 rue E. Belin, 57070 Metz, France
J. P. Salvestrini
Affiliation:
Laboratoire Matériaux Optiques, Photonique et Systèmes, UMR CNRS 7132, University of Metz and Supélec, 2 rue E. Belin, 57070 Metz, France
A. Ougazzaden
Affiliation:
Georgia Institute of Technology/GTL, UMI 2958 GT-CNRS, 2-3 rue Marconi, 57070 Metz, France
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Abstract

GaN epilayers were grown by metal-organic vapor phase epitaxy (MOVPE) on z- and x-cut lithium niobate substrates. Ex-situ characterizations of the epilayers by means of scanning electron microscope, atomic force microscope, X-ray diffraction and micro-Raman scattering measurements have revealed same growth features on both substrates. The observation of the morphology shows homogeneous and relatively smooth surface. The shape and density of GaN islands as well as the observed columnar growth mode are not dependent of the orientation of the LN substrates. The X-ray diffraction analysis of 450 nm thick GaN layers grown at 730 °C on z- and x-cuts showed that both GaN layers reveal the same crystallographic orientation, i.e. c-axis orientation normal to the substrate plane and in-plane orientation that coincides with the primary axis of LN substrates. The Raman scattering measurements confirm the growth of an oriented epitaxial GaN layer on LN substrate. Moreover, the deposited layer exhibit a quite good homogeneity, since the Raman spectra recorded for different positions in the layer do not reveal any significant variations in their relative intensities and frequency shifts.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2008

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References

Lee, K.-K., Namkoong, G., Madison, S.M., Ralph, S.E., Doolittle, W.A., Losurdo, M., Bruno, G., Cho, H.K., Mater. Sci. Eng. B 140, 203 (2007) CrossRef
Doolittle, W.A., Namkoong, G., Carver, A.G., Brown, A.S., Solid-States Electron. 47, 2143 (2003) CrossRef
Hui, R., Wan, Y., Li, J., Jin, S., Lin, J., Jiang, H., IEEE J. Quant. Electron. 41, 100 (2005)
W.A. Doolittle, G. Namkoong, A. Carver, W. Henderson, D. Jundt, A.S. Brown, Proceedings of Material Research Society Fall Meeting, Vol. 743 (2002), p. L1.4
Namkoong, G., Lee, K.-K., Madison, S.M., Henderson, W., Ralph, S.E., Doolittle, W.A., Appl. Phys. Lett. 87, 171107 (2005) CrossRef
Y. Tsuchiya, A. Kobayashi, J. Ohta, H. Fujioka, M. Oshima, Phys. Stat. Sol. (a) 202, R 145 (2005)
Langer, R., Simon, J., Ortiz, V., Pelekanos, N.T., Barski, A., Andre, R., Godlewski, M., Appl. Phys. Lett. 74, 3827 (1999) CrossRef
Lefebvre, P., Allegre, J., Gil, B., Methieu, H., Grandjean, N., Leroux, M., Massics, J., Bigenwald, P., Phys. Rev. B 59, 15363 (1999) CrossRef
Lefebvre, P., Morel, A., Gallart, M., Taliercio, T., Allegre, J., Gil, B., Mathieu, H., Damilano, B., Grandjean, N., Massics, J., Appl. Phys. Lett. 78, 1252 (2001) CrossRef
Takeuchi, T., Wetzel, C., Yamaguchi, S., Sakai, H., Amano, H., Akasaki, I., Kaneko, Y., Nagagawa, S., Yamaoka, Y., Yamada, Y., Appl. Phys. Lett. 73, 1691 (1998) CrossRef
Sartel, C., Gautier, S., Ould Saad Hamady, S., Maloufi, N., Martin, J., Sirenko, A., Ougazzaden, A., J. Superlatt. Microstruct. 40, 476 (2006) CrossRef
Gautier, S., Sartel, C., Ould-Saad, S., Martin, J., Sirenko, A., Ougazzaden, A., J. Cryst. Growth 298, 428 (2007) CrossRef
Yu.S. Kuz'minov, Lithium niobate crystals (Cambridge International Science Publishing, 1st published June 1999)
Ougazzaden, A., Moudakir, T., Aggerstam, T., Orsal, G., Salvestrini, J.P., Gautier, S., Sirenko, A.A., Phys. Stat. Sol. (c) 5, 1565 (2008) CrossRef
Davydov, V.Yu., Averkiev, N.S., Goncharuk, I.N., Nelson, D.K., I.P. Nikitina, A.S. Polkovnikov, A.N. Smirnov, M.A. Jacobson, O.K. Semchinova, J. Appl. Phys. 82, 5097 (1997) CrossRef
Kisielowski, C., Krüger, J., Ruvinov, S., Suski, T., Ager III, J.W., Jones, E., Liliental-Weber, Z., Rubin, M., Weber, E.R., Bremser, M.D., Davis, R.F., Phys. Rev. B 54, 17745 (1996) CrossRef