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Nonequilibrium carrier dynamics in heavily p-doped GaAs

Published online by Cambridge University Press:  15 July 2004

K. Jarasiunas*
Affiliation:
Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9-3, LT-2040 Vilnius, Lithuania
R. Aleksiejunas
Affiliation:
Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9-3, LT-2040 Vilnius, Lithuania
T. Malinauskas
Affiliation:
Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9-3, LT-2040 Vilnius, Lithuania
V. Gudelis
Affiliation:
Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9-3, LT-2040 Vilnius, Lithuania
M. Sudzius
Affiliation:
Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9-3, LT-2040 Vilnius, Lithuania
A. Maaßdorf
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein Strasse 11, 12489 Berlin, Germany
F. Brunner
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein Strasse 11, 12489 Berlin, Germany
M. Weyers
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein Strasse 11, 12489 Berlin, Germany
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Abstract

A non-degenerate four-wave mixing technique has been applied to investigate carrier transport and recombination in heavily C-doped GaAs embedded in a double-heterostructure. The carriers were injected into the 1 µm-thick p-GaAs layer via the 50 nm-thick barrier of AlGaAs:C or InGaP:Si, using the light interference pattern of two picosecond laser pulses at 532 nm. The dependence of the nonequilibrium carrier grating decay time on the grating period allows the determination of minority carrier diffusion coefficients: D = 35 cm2/s for p-GaAs ( $p_0 = 2 \times 10^{19}$  cm−3) with AlGaAs barriers and D = 27 cm2/s for p-GaAs ( $p_{0} = 1 \times 10^{19}$  cm−3) with InGaP barriers. This increase of electron mobility at the higher doping level was found to be in agreement with the decreasing role of carrier-carrier scattering in heavily-doped p-GaAs. The fast recombination of nonequilibrium carriers in the vicinity of a front barrier layer was evident and more pronounced for an AlGaAs than for an InGaP barrier.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2004

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References

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