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Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
Published online by Cambridge University Press: 15 July 2004
Abstract
The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH$\rightarrow$1E and 1LH$\rightarrow$1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.
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- © EDP Sciences, 2004