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Ge nanoparticles based MOS structure and their Raman characterization

Published online by Cambridge University Press:  22 February 2007

Y. Batra ,
D. Kabiraj  and
D. Kanjilal
Y. Batra*
Affiliation:
Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi – 110 067, India
D. Kabiraj
Affiliation:
Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi – 110 067, India
D. Kanjilal
Affiliation:
Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi – 110 067, India
*
ybatra@iuac.res.in
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Abstract

Charge retention properties of Ge nanoparticles embedded in SiO2 matrix are investigated. Formation of embedded Ge nanoparticles was accomplished by optimizing electron beam evaporation process. Size of Ge nanoparticles has been characterized by atomic force microscopy (AFM) which comes out to be ~15 nm. Presence of Ge nanoparticles is confirmed by micro-Raman analysis. Memory effect of Ge nanoparticles is verified by capacitance-voltage (C-V) measurements which show hysteresis in the C-V curves.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 38 , Issue 1 , April 2007 , pp. 27 - 30
Copyright
© EDP Sciences, 2007

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