Skip to main content Accessibility help
×
Home
Hostname: page-component-99c86f546-n7x5d Total loading time: 0.289 Render date: 2021-12-05T06:33:07.444Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Ge nanoparticles based MOS structure and their Raman characterization

Published online by Cambridge University Press:  22 February 2007

Y. Batra*
Affiliation:
Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi – 110 067, India
D. Kabiraj
Affiliation:
Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi – 110 067, India
D. Kanjilal
Affiliation:
Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi – 110 067, India
Get access

Abstract

Charge retention properties of Ge nanoparticles embedded in SiO2 matrix are investigated. Formation of embedded Ge nanoparticles was accomplished by optimizing electron beam evaporation process. Size of Ge nanoparticles has been characterized by atomic force microscopy (AFM) which comes out to be ~15 nm. Presence of Ge nanoparticles is confirmed by micro-Raman analysis. Memory effect of Ge nanoparticles is verified by capacitance-voltage (C-V) measurements which show hysteresis in the C-V curves.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E.F., Chan, K., Appl. Phys. Lett. 68, 1377 (1996) CrossRef
Kim, Y., Park, K.H., Chung, T.H., Bark, H.J., Yi, J.Y., Choi, W.C., Kim, E.K., Lee, J.W., Lee, J.Y., Appl. Phys. Lett. 78, 934 (2001) CrossRef
Kanjilal, A., Hansen, J.L., Gaiduk, P., Larsen, A.N., Cherkashin, N., Claverie, A., Normand, P., Kapelanakis, E., Skarlatos, D., Tsoukalas, D., Appl. Phys. Lett. 82, 1212 (2003) CrossRef
Tiwari, S., Rana, F., Chan, K., Shi, L., Hanafi, H., Appl. Phys. Lett. 69, 1232 (1996) CrossRef
Lu, T.Z., Alexe, M., Scholz, R., Talalaev, V., Zhang, R.J., Zacharias, M., J. Appl. Phys. 100, 014310 (2006) CrossRef
Park, C.J., Cho, K.H., Yang, W.C., Cho, H.Y., Suk-Ho Choi, R.G. Elliman, J.H. Han, Chungwoo Kim, Appl. Phys. Lett. 88, 71916 (2006) CrossRef
Lee, P.F., Lu, X.B., Chan, H.L.W., Jelenkovic, E., Tong, K.Y., Nanotechnology 17, 1202 (2006) CrossRef
King, Y.C., King, T.J., Hu, C.M., IEEE Trans. Electron Devices 48, 696 (2001) CrossRef
Baron, T., Pelissier, B., Perniola, L., Mazen, F., Hartmann, J.M., Rolland, G., Appl. Phys. Lett. 83, 1444 (2003) CrossRef
Wang, Y.Q., Chen, J.H., Yoo, W.J., Yeo, Y.C., Kim, S.J., Gupta, R., Tan, Z.Y.L., Kwang, D.L., Du, A.Y., Balasubhramanian, N., Appl. Phys. Lett. 84, 5407 (2004) CrossRef
Serincan, U., Kartopu, G., Guennes, A., Finstad, T.G., Turan, R., Ekinci, Y., Bayliss, S.-C., Semicond. Sci. Tech. 19, 247 (2004) CrossRef
Das, K., NandaGoswami, M., Mahapatra, R., Kar, G.S., Dhar, A., Acharya, H.N., Maikap, S., Je-Hun Lee, S.K. Ray, Appl. Phys. Lett. 84, 1386 (2004) CrossRef

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Ge nanoparticles based MOS structure and their Raman characterization
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Ge nanoparticles based MOS structure and their Raman characterization
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Ge nanoparticles based MOS structure and their Raman characterization
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *