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Diminution of the activity of B atoms by H-induced defects inH2 and B2H6 co-implanted Si

Published online by Cambridge University Press:  15 July 2004

Katsuhiro Yokota
Affiliation:
Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
Syuusaku Nakase
Affiliation:
Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
Kazuhiro Nakamura
Affiliation:
Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
Fumiyoshi Miyashita
Affiliation:
Faculty of Informatics, Kansai University, Takatsuki, Osaka, 569-1095, Japan
Masayasu Tannjou
Affiliation:
Nissin Electric Co., Kujo-Tonoshiro, Minami-ku, Kyoto 601-8205, Japan
Shigeki Sakai
Affiliation:
Nissin Electric Co., Kujo-Tonoshiro, Minami-ku, Kyoto 601-8205, Japan
Hiromichi Takano
Affiliation:
Kanagawa High-Technology Foundation, Kanagawa Science Park, Kawasaki, Kanagawa 213-0012, Japan
Corresponding
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Abstract

Diborane and hydrogen ions were co-implanted into silicon using an implanter without an ion analyzer. The samples were annealed at 1000 °C for 30 min in argon atmosphere. Regions containing carriers became narrower with an increasing fraction of H2 gas in the source mixed gas: for example, carriers were limited only in a narrow region from the surface to $0.3\;\mu$ m on silicon implanted with a mixed gas of 57% H2–43% B2H6. The width of the region containing carriers was approximately double that ( $\sim 0.6\;\mu$ m) on B-implanted silicon. On the other hand, the width of the region containing B atoms on the H2 and B2H6 co-implanted silicon were slightly narrower than that on B-implanted silicon. The region containing inactivated B atoms had a large number of defects and small crystallites.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2004

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References

Cardona, M., Phys. Stat. Sol. B 118, 463 (1983) CrossRef
J. I. Pankove, Hydrogenation of defects in crystalline silicon, edited by J. I. Pankov, N. M. Johnson, Hydrogen in Semiconductors (Academic. Boston, 1991), p. 35
Seager, C. H., Anderson, R. A., Appl. Phys. Lett. 53, 1181 (1988) CrossRef
B. B. Nielsen, L. Hoffman, M. Budde, R. Jones, J. Goss, S. Oberg, Mat. Sci. Forum 196–201 (Trans, Zurich, 1995), p. 933
Wu, K. H., Washburn, J., J. Appl. Phys. 48, 3742 (1977) CrossRef
Andrews, J. M., J. Electron. Mater. 8, 227 (1979) CrossRef
T. Abe, Silicon (Baifukan, Toukyo, 1994), Chap. 7
A. J. Jeng, G. S. Oehrlein, G. J. Scilla, Mat. Res. Soc. Symp. Proc. Ser. 104 (Mat. Res. Soc., Warrendale, 1988), p. 247

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Diminution of the activity of B atoms by H-induced defects in H2 and B2H6 co-implanted Si
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