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Deuteron implantation into hexagonal silicon carbide: defects and deuterium behaviour

Published online by Cambridge University Press:  29 November 2002

A. Shiryaev
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands Institute of Crystallography, Leninsky Pr. 59, 119333 Moscow, Russia
A. van Veen
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
A. Rivera
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
M. van Huis
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
T. Bus
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
W. M. Arnoldbik
Affiliation:
Utrecht University, Princetonplein 5, 3584 CC Utrecht, Postbus 80000, 3508 TA Utrecht, The Netherlands
N. Tomozeiu
Affiliation:
Utrecht University, Princetonplein 5, 3584 CC Utrecht, Postbus 80000, 3508 TA Utrecht, The Netherlands
F. H. P. M. Habraken
Affiliation:
Utrecht University, Princetonplein 5, 3584 CC Utrecht, Postbus 80000, 3508 TA Utrecht, The Netherlands
R. Delamare
Affiliation:
CERI/CEA, 3A rue de Ferollerie, 45071 Orleans, France
E. Ntsoenzok
Affiliation:
CERI/CEA, 3A rue de Ferollerie, 45071 Orleans, France
Corresponding
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Abstract

Results of the comprehensive study of deuterium-implanted hexagonal SiC (4H and 6H) using optical absorption and infrared measurements, elastic recoil detection analysis, thermal desorption and positron annihilation spectroscopies are reported. It is shown that implanted deuterium mainly forms bonds with lattice atoms. The amount of deuterium in the form of interstitial molecules and in vacancies is considerably smaller. Ion implantations with fluences exceeding 1015 D+/cm−2 create point defects in concentrations sufficiently high for complete positron trapping. Recrystallisation of the amorphised SiC does not remove the positron traps.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2003

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References

Janson, M.S., et al., Phys. Rev. B 64, 195202 (2001) CrossRef
Aradi, B., et al., Phys. Rev. B 63, 245202 (2001) CrossRef
J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1999)
van Veen, A., Warnaar, A., Caspers, L.M., Vacuum 30, 109 (1980) CrossRef
Arnoldbik, W.M., Habraken, F.P.W.M., Rep. Prog. Phys. 56, 859 (1993)
H. Schut, Ph.D. thesis, Delft University of Technology, 1990
van Veen, A., et al., AIP Conf. Proc. 218, 171 (1991) CrossRef
S.J. Pearton, J.W. Corbett, M. Stavola, Hydrogen in Crystalline Semiconductors (Springer, Berlin, 1992)
Redhead, A., Vacuum 12, 203 (1962) CrossRef
Makhtari, A., et al., Mater. Sci. Semicond. Proc. 4, 345 (2001) CrossRef
Brauer, G., et al., Phys. Rev. B 54, 3084 (1996) CrossRef
Barthe, M.-F., et al., Phys. Rev. B 62, 16638 (2000) CrossRef
L. Henry, Ph.D. thesis, Orleans, 2001
Anwand, W., et al., Appl. Surf. Sci. 149, 148 (1999) CrossRef
Sun, Y., Sonoda, N., Miyasato, T., Jpn. J. Appl. Phys. 39, 3319 (2000) CrossRef
Wendler, E., Heft, A., Wesch, W., Nucl. Instrum. Methods B 141, 105 (1998) CrossRef
Weber, W.J., et al., Mater. Sci. Eng. A 253, 62 (1998) CrossRef
Hofgen, A., et al., Mater. Sci. Eng. B 61-62, 353 (1999) CrossRef
Calcagno, L., Grimaldi, M.G., Musumeci, P., J. Mater. Res. 12, 1727 (1997) CrossRef
Jiang, W., et al., J. Nucl. Mater. 257, 295 (1998) CrossRef
Jiang, W., et al., Nucl. Instrum. Methods B 166-167, 374 (2000) CrossRef
Zavada, J.M., et al., Solid State Electron. 41, 677 (1997) CrossRef
A. van Veen, in: Fundamental Aspects of Inert gases in Solids, NATO ASI Series B, Physics 279, edited by S.E. Donnely, J.H. Evans (Plenum Publishing Corp., New York, USA, 1991), p. 41
Kawasuso, A., et al., J. Appl. Phys. 90, 3377 (2001) CrossRef
Patrick, L., Choyke, W.J., Phys. Rev. B 8, 1660 (1973) CrossRef
Hojou, K., et al., Nucl. Instrum. Methods B 141, 148 (1998) CrossRef
Janoschek, R., et al., Pure Appl. Chem. 73, 1521 (2001) CrossRef
Calcagno, L., et al., Philos. Mag. B 79, 1685 (1999) CrossRef
Calcagno, L., et al., Appl. Surf. Sci. 184, 123 (2001) CrossRef
Brauer, G., et al., Phys. Rev. B 54, 2512 (1996) CrossRef
R. Delamare, et al., Mat. Res. Soc. Symp. Proc. 719, F9.7.1-6 (2002)

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