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An influence of bottom electrode material on electrical conduction and resistance switching of TiOx thin films

Published online by Cambridge University Press:  09 December 2013

Kim Ngoc Pham
Affiliation:
Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh, Vietnam
Trung Do Nguyen
Affiliation:
Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh, Vietnam
Thi Kieu Hanh Ta
Affiliation:
Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh, Vietnam
Khanh Linh Dao Thuy
Affiliation:
Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh, Vietnam
Van Hieu Le
Affiliation:
Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh, Vietnam
Duy Phong Pham
Affiliation:
Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh, Vietnam
Cao Vinh Tran
Affiliation:
Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh, Vietnam
Derrick Mott
Affiliation:
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, Japan
Shinya Maenosono
Affiliation:
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, Japan
Sang Sub Kim
Affiliation:
School of Materials Science and Engineering, Inha University, Incheon 402-751, South Korea
Jaichan Lee
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, South Korea
Duc Thang Pham
Affiliation:
Faculty of Engineering Physics and Nanotechnology, University of Engineering and Technology, Vietnam National University, Hanoi, Vietnam
Bach Thang Phan*
Affiliation:
Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh, Vietnam Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh, Vietnam
*
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Abstract

We investigated the electrical conduction and resistance switching mechanisms of TiOx thin films grown on three kinds of bottom electrode at room temperature (an inert Pt, an active Ti and fluorine tin oxide FTO electrodes). The bottom electrode materials strongly affect the I-V characteristics and switching parameters. The I-V characteristic is explained through the presence of interface states in the metal electrode devices (Pt and Ti) and the work function in the metal oxide device (FTO). The Pt device has the smallest VSET and largest switching ratio, while the Ti device shows the largest VSET and smallest switching ratio. XPS data shows non-lattice oxygen in TiOx films. Therefore, the proposed bipolar resistance switching arises from formation and rupture of filament paths, generated by the movement of oxygen vacancies. All devices depict the same electrical conductions, trap-controlled space-charge-limited, FN tunneling and Ohmic conductions for a high resistance state and a low resistance state, respectively. In this study, the rarely reported FN tunneling conduction in published TiOx-based ReRAM device was found, which can be attributed to an influence of the bottom electrode on the electronic distribution in devices.

Type
Research Article
Copyright
© EDP Sciences, 2013

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