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An accurate SPICE-compatible circuit model for power FLYMOSFETs

Published online by Cambridge University Press:  08 August 2007

A. Galadi*
Affiliation:
LAAS-CNRS, 7 Av. du Colonel Roche, 31077 Toulouse Cedex 4, France Université Cadi Ayyad, Marrakech, Morocco
F. Morancho
Affiliation:
LAAS-CNRS, 7 Av. du Colonel Roche, 31077 Toulouse Cedex 4, France
K. Benhida
Affiliation:
Université Cadi Ayyad, Marrakech, Morocco
M. M. Hassani
Affiliation:
Université Cadi Ayyad, Marrakech, Morocco
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Abstract

In this paper, a new SPICE-compatible circuit model for low voltage, low on-resistance power FLYMOSFETs is presented for the first time. In this new structure, the improvement of the on-resistance has been obtained by inserting floating islands in the lowly doped layer. Our modelling is based on device physics, analytical study and on experimental characterization. The inter-electrode capacitances are modelled accurately as nonlinear functions, and good agreement between simulation and measurements is found.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2007

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References

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