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ZnO Thin Film Deposition on Sapphire Substrates by Chemical Vapor Deposition

Published online by Cambridge University Press:  31 January 2011

Zhuo Chen
Affiliation:
zhuochen@brooklyn.cuny.edu, brooklyn college, brooklyn, New York, United States
Tom Salagaj
Affiliation:
tsalagaj@cvdequipment.com, CVD Equipment, Ronkonkoma, New York, United States
Christopher Jensen
Affiliation:
cjensen@firstnano.com, CVD Equipment, Ronkonkoma, New York, United States
Karlheinz Strobl
Affiliation:
kstrobl@cvdequipment.com, CVD Equipment, Ronkonkoma, New York, United States
Mim Nakarmi
Affiliation:
Physics Department, Brooklyn College of the City University of New York, 2900 Bedford Avenue, Brooklyn, NY 11210, USA
Kai Shum
Affiliation:
kshum@brooklyn.cuny.edu, Brooklyn College, Physics, 2900 Bedford Ave, Brooklyn, New York, 11210, United States
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Abstract

ZnO thin films with thickness around 200 nm were deposited on a-plane sapphire substrates by Chemical Vapor Deposition (CVD) method with a mixed ZnO-powder/C-powder solid source. These films were characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), and photoluminescence (PL) spectroscopy. The correlation between surface structural properties of ZnO thin films and their optical signature measured by temperature dependence of PL is investigated for various growth conditions such as flow rate O2 injection gas and growth temperature. At room temperature, the columbic interaction enhanced absorption edge of 3.305 eV of these films was determined by optical absorption measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

1 Mollwo, E. in Semiconductors: Physics of II-VI and I-VII Compounds, Semimagnetic Semiconductors, edited by Madelung, O., Schulz, M. and Weiss, H. (Springer, Berlin, 1982), vol. 17 of Landolt-Börnstein New Series, p. 35.Google Scholar
2 O'Kane, E., Phys. Rev. B 18, 6849 (1978).Google Scholar
3 Sun, X. W. and Kwok, H. S. J. Appl. Phys. 86, 408 (1999).Google Scholar
4 Ozgur, U. et al. , J. Appl. Phys. 98, 043101 (2005).Google Scholar
5 Look, D. L. J. Electronic Materials 35, 1299 (2006).Google Scholar
6 Tauc, J. Amorphous and Liquid Semiconductors (Plenum, London, 1974).Google Scholar
7 Whangbo, S. W. et al. , J. of Korean Physical Society 33, 456 (2000).Google Scholar
8 Cracium, V. et al. , Appl Phys. Lett. 65, 2963 (1994).Google Scholar
9 Oleynik, N. Ph.D. Dissertation, University of Magdeburg, July 2007.Google Scholar