Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-28T03:26:27.107Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray Diffraction Method for Determining Textured Volume Fractions in PZT Thin Films

Published online by Cambridge University Press:  10 February 2011

G.R. Fox
G.R. Fox*
Affiliation:
Ramtron International Corporation, Colorado Springs, CO 80921, glen.fox@ramtron.com
Get access

Abstract

The crystallographic texture of PZT thin films has been proven to play a critical role in the electrical performance of PZT used in non-volatile FRAM. During both development and production of FRAM, PZT texture must be monitored to assure ferroelectric performance. A common method for monitoring texture is to use normalized intensities collected from X-ray diffraction 2-theta scans. Although this method can reveal thin film texture, it does not give a quantitative measure of the volume of textured and/or random material. In addition, this method can only be used to compare films with constant thickness since differences in X-ray absorption are not taken into account. A new method for calculating the volume fractions of textured and randomly oriented material in PZT thin films has been developed. This new method for calculating textured volume fractions still utilizes integrated intensities from 2-theta scans, but the calculations include corrections for film thickness and geometrical factors. The calculated volume fractions obtained from this new method of data analysis can be used directly for physical evaluation of PZT thin film ferroelectric performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 529
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chen, S. and Chen, I., J. Am. Ceram. Soc. 77, p. 2337 (1994).Google Scholar
2. Brooks, K.G., Reaney, I.M., Klissurska, R., Huang, Y., Bursill, L., and Setter, N., J. Mater. Res. 9, p. 2540 (1994).Google Scholar
3. Peterson, C.R., Medendorp, N.W., Slamovich, E.B., and Bowman, K.J., (Mater. Res. Soc. Proc. 433, Pittsburgh, PA 1996).Google Scholar
4. Cullity, B.D., Elements of X-Ray Diffraction, 2nd edition, Addison-Wesley Publishing Co., Inc., Reading, Massachusetts, 1978, pp. 107–145.Google Scholar
5. Hadnagy, T.D. and Davenport, T., Integrated Ferroelectrics, Proc. 10th Inter. Symp. Integrated Ferroelectrics, 1998.Google Scholar