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A WORM-Type Memory Device with Rectifying Effect Based on a Conjugated Copolymer of PF6Eu on Si Substrate

Published online by Cambridge University Press:  01 February 2011

Yoke Ping Tan ,
Q.D Ling ,
Y.H Teo Eric ,
Y. Song ,
S.L Lim ,
G.Q Lo Patrick ,
E. T Kang ,
Chunxiang Zhu  and
D.S.H Chan
Yoke Ping Tan
Affiliation:
eletyp@nus.edu.sg, National University of Singapore, Department of Electrical and Computer Engineering, 10 Kent Ridge Crescent, Singapore, Singapore, 119260, Singapore
Q.D Ling
Affiliation:
chelqd@nus.edu.sg, National University of Singapore, Department of Chemical and Biomolecular Engineering, 10 Kent Ridge Crescent, Singapore, 119260, Singapore
Y.H Teo Eric
Affiliation:
eletyhe@nus.edu.sg, National University of Singapore, Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, 10 Kent Ridge Crescent, Singapore, 119260, Singapore
Y. Song
Affiliation:
songyan@nus.edu.sg, National University of Singapore, Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, 10 Kent Ridge Crescent, Singapore, 119260, Singapore
S.L Lim
Affiliation:
g0404230@nus.edu.sg, National University of Singapore, Department of Chemical and Biomolecular Engineering, 10 Kent Ridge Crescent, Singapore, 119260, Singapore
G.Q Lo Patrick
Affiliation:
logq@ime.a-star.edu.sg, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore, 117685, Singapore
E. T Kang
Affiliation:
cheket@nus.edu.sg, National University of Singapore, Department of Chemical and Biomolecular Engineering, 10 Kent Ridge Crescent, Singapore, 119260, Singapore
Chunxiang Zhu
Affiliation:
elezhucx@nus.edu.sg, National University of Singapore, Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, 10 Kent Ridge Crescent, Singapore, 119260, Singapore
D.S.H Chan
Affiliation:
danielchan@nus.edu.sg, National University of Singapore, Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, 10 Kent Ridge Crescent, Singapore, 119260, Singapore
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Abstract

We report a non-volatile, write-once-read-many times (WORM) memory device based on a simple organic-inorganic heterojunction. The organic film used is 9, 9-dihexylfluorene and Eu-complexed benzoate (PF6Eu (DBM)), which contains both electron-donor (9, 9-dihexylfluorene) and electron-acceptor (europium complex) groups. The inorganic n-type silicon substrate is used as the bottom electrode, while the Al is used as the top electrode. Under current-voltage testing, the device is able to switch from one initial non-conducting state (OFF) to a conducting state (ON) once a threshold voltage is reached under the first positive sweep. The “OFF” state is not recoverable with subsequent negative sweep after the device is turned “ON”. The ON/OFF current ratio is around 4×104. Diode rectifying characteristics is also observed for the turned-on device with a current ratio of 7×104, which is essential to address one memory cell in large passive matrix circuits. Reliability test is carried out and the device is able to sustain its “ON” state for at least 12 hours without any external bias.

Keywords

Simemorypolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 937: Symposium M – Conjugated Organic Materials – Synthesis, Structure, Device, and Applications , 2006 , 0937-M10-29
Copyright
Copyright © Materials Research Society 2006

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