Hostname: page-component-848d4c4894-75dct Total loading time: 0 Render date: 2024-05-08T04:36:07.411Z Has data issue: false hasContentIssue false
  • English
  • Français

Wide Gan Stripes by Lateral Growth in Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  10 February 2011

A. Kimura ,
C. Sasaoka ,
A. Sakai  and
A. Usui
A. Kimura
Affiliation:
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan, kimura@optd.cl.nec.co.jp
C. Sasaoka
Affiliation:
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan, kimura@optd.cl.nec.co.jp
A. Sakai
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
A. Usui
Affiliation:
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan, kimura@optd.cl.nec.co.jp
Get access

Abstract

We investigated the growth conditions for enhancing epitaxial lateral overgrowth (ELO) of GaN stripes selectively grown by low-pressure metalorganic vapor phase epitaxy. The ELO was enhanced for GaN <1100> stripes and with a small trimethylgallium flow-rate. This tendency did not depend on mask materials. The cross-sectional shape of the GaN <1100> stripes was trapezoidal for SiO2 masks, and rectangular for silicon nitride (SiN2) masks in a certain growth condition. A low dislocation density in the ELO region was obtained not only for the SiO2 masks but also for the SiN2 masks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 119
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Matsushima, H., Yamaguchi, M., Hiramatsu, K., and Sawaki, N., PROCEEDINGS of The Second International Conference on Nitride Semiconductors 1997, p. 492.Google Scholar
2. Usui, A., Sunakawa, H., Sakai, A., and Yamaguchi, A. A., Jpn. J. Appl. Phys. 36, p. L899 (1997).10.1143/JJAP.36.L899Google Scholar
3. Nam, O., Bremser, M. D., Zheleva, T. S., and Davis, R. F., Appl. Phys. Lett. 18, p. 2638 (1997).Google Scholar
4. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y, Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., PROCEEDINGS of The Second International Conference on Nitride Semiconductors 1997, p. 444.Google Scholar
5. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., Kiyoku, H., Appl. Phys. Lett. 69, p. 1477 (1996).10.1063/1.116913Google Scholar
6. Akasaka, T., Kobayashi, Y., Ando, S., Kobayashi, N., and Kumagai, M., PROCEEDINGS of The Second International Conference on Nitride Semiconductors 1997, p. 490.Google Scholar