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A Voltage-Tunable Two-Color InGaAs/AlGaAs Quantum well Infrared Photodetector

Published online by Cambridge University Press:  01 February 2011

Brandon Passmore ,
Jie Liang ,
Da Zhuang ,
Omar Manasreh ,
Vasyl Kunets  and
Greg Salamo
Brandon Passmore
Affiliation:
manasreh@engr.uark.edu, University of Arkansas, Electrical Engineering and Microelectronics and Photonics, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States
Jie Liang
Affiliation:
Jane_Liang@diodes.com, University of Arkansas, Electrical Engineering and Microelectronics and Photonics, Fayetteville, AR, 72701, United States
Da Zhuang
Affiliation:
dzhuang@uark.edu, University of Arkansas, Electrical Engineering and Microelectronics and Photonics, Fayetteville, AR, 72701, United States
Omar Manasreh
Affiliation:
manasreh@uark.edu, University of Arkansas, Electrical Engineering and Microelectronics and Photonics, Fayetteville, AR, 72701, United States
Vasyl Kunets
Affiliation:
vkunets@uark.edu, University of Arkansas, Physics, Fayetteville, AR, 72701, United States
Greg Salamo
Affiliation:
salamo@uark.edu, University of Arkansas, Physics, Fayetteville, AR, 72701, United States
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Abstract

A voltage-tunable two-color multiple quantum well infrared photodetector was fabricated with two bands at 6.0 and 10.3 ìm. The molecular beam epitaxy grown structure consists of two stacks of n-type InGaAs wells and GaAs/AlGaAs superlattice barriers. The 6.0 ìm band was found to be dominant at low bias voltages while the 10.3 ìm band is dominant at high bias voltages. The optical absorption measurements confirm the presence of both bands. Furthermore, the transfer matrix method is used to estimate the peak position energies of the intersubband transitions in the two stacks.

Keywords

photoconductivitydevicesIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M17-14
Copyright
Copyright © Materials Research Society 2007

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References

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