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A Voltage-Tunable Two-Color InGaAs/AlGaAs Quantum well Infrared Photodetector
Published online by Cambridge University Press: 01 February 2011
Abstract
A voltage-tunable two-color multiple quantum well infrared photodetector was fabricated with two bands at 6.0 and 10.3 ìm. The molecular beam epitaxy grown structure consists of two stacks of n-type InGaAs wells and GaAs/AlGaAs superlattice barriers. The 6.0 ìm band was found to be dominant at low bias voltages while the 10.3 ìm band is dominant at high bias voltages. The optical absorption measurements confirm the presence of both bands. Furthermore, the transfer matrix method is used to estimate the peak position energies of the intersubband transitions in the two stacks.
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- Copyright © Materials Research Society 2007