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Visible-Blind UV/IR Photodetectors Integrated on Si Substrates

Published online by Cambridge University Press:  01 February 2011

David Starikov ,
John Chris Boney ,
Rajeev Pillai  and
Abdelhak Bensaoula
David Starikov
Affiliation:
dstarikov@uh.edu, Integrated Micro Sensors Inc., IMS, 10814 Atwell Dr., Houston, 77096, United States
John Chris Boney
Affiliation:
cboney@imsensors.com, Integrated Micro Sensors Inc., 10814 Atwell Dr., Houston, 77096, United States
Rajeev Pillai
Affiliation:
rajeev@svec.uh.edu, University of Houston, CAM, 724 Science & Research Bldg. 1, Houston, 77004, United States
Abdelhak Bensaoula
Affiliation:
bens@uh.edu, University of Houston, CAM, 724 Science & Research Bldg. 1, Houston, 77004, United States
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Abstract

A concept based on structures fabricated using stacked semiconducting layers to obtain a multi spectral photoresponse is investigated. Issues related to III nitride layer growth on thin Si wafers, such as substrate temperature recalibration and mechanical stress due to the lattice mismatch, have been studied. The grown on Si substrate III nitride layers were characterized by using spectroscopic ellipsometry and capacitance measurements. Fabrication of a dual-band UV/IR photodetector with a reasonable responsivity at room temperature has been demonstrated. The integrated device is capable of detecting optical emissions separately in the UV and IR parts of the spectrum. The responsivities of this device are ∼0.01 A/W, at a peak wavelength of 300 nm and ∼0.08 A/W, at a peak wavelength of 1000 nm, respectively. The described dual-band photodetectors can be employed for false alarm-free fire/flame detection and advanced hazardous object or target detection and recognition in several industrial, military, and space applications.

Keywords

photovoltaicinfrared (IR) spectroscopysensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 934: Symposium I – Silicon-Based Microphotonics , 2006 , 0934-I09-04
Copyright
Copyright © Materials Research Society 2006

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