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VHF-Deposited a-SiC:H Alloys for High-Bandgap Solar Cells: Combining High Voc and Reasonable Stability

Published online by Cambridge University Press:  15 February 2011

R. Platz ,
D. Fischer  and
A. Shah
R. Platz
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
D. Fischer
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
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Abstract

The material properties of a-SiC:H alloys deposited by VHFGD are studied, with a special emphasis on the effect of hydrogen dilution of the plasma on layer quality. By incorporating these layers into p-i-n solar cells the authors compare layer properties and cell performance. Special attention is paid to the stability of the solar cells against light soaking. Furthermore, the authors show that the insertion of a buffer layer can, also in the case of entirely a-SiC:H cells, lead to a substantial increase of Voc. A reasonable stability of these cells is maintained by an appropriate doping of the buffer layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 645
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Li, Y.-M. et al., Proc. 23rd IEEE PVSC (1993) 850.Google Scholar
2 Guha, S. et al., MRS Symp. Proc. 336 (1994) 645.Google Scholar
3 Crovini, G. et al., MRS Symp. Proc. 336 (1994) 481.Google Scholar
4 Prasad, K. et al., MRS Symp. Proc. 219 (1991) 469.Google Scholar
5 Galloni, R. et al., MRS Symp. Proc. 336 (1994) 517.Google Scholar
6 Rech, B. et al., Proc. 12th EC PVSEC, Amsterdam 1994, 1245.Google Scholar
7 Matsuda, A. et al., J. Appl. Phys. 60 (11) 1986, 4025.Google Scholar
8 Eberhardt, K. et al., MRS Symp. Proc. 258 (1992) 673.Google Scholar
9 Ghosh, S. et al., J. Appl. Phys. 71 (10) 1992, 5205.Google Scholar
10 Rech, B. et al., Proc. 1st WCPEC, Hawaii 1994, to be published.Google Scholar