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VHF Plasma Deposition of μc-Si p-Layer Materials

Published online by Cambridge University Press:  15 February 2011

X. Deng ,
S. J. Jones ,
T. Liu ,
M. Izu ,
S. R. Ovshinsky  and
K. Hoffman
X. Deng
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
S. J. Jones
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
T. Liu
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
M. Izu
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
S. R. Ovshinsky
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
K. Hoffman
Affiliation:
United Solar Systems Corp., Troy, Michigan 48084
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Abstract

Microcrystalline silicon (μc-Si) p-layers have been widely used in amorphous silicon (a-Si) solar cell research and manufacturing to achieve record high solar cell efficiency. In order to further improve the solar cell performance and achieve wider parameter windows for the process conditions, we studied the deposition of high quality μc-Si p-layer material using a very high frequency (VHF) plasma enhanced CVD process. A design of experiment (DOE) approach was used for the exploration and optimization of deposition parameters. The usage of DOE leads to a quick optimization of the deposition process within a short time frame. In addition, by using a modified VHF deposition process, we have improved the solar cell blue response which leads to a 6–10% improvement in the solar cell efficiency. Such an improvement is likely due to an improved microcrystalline formation in the p-layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 795
Copyright
Copyright © Materials Research Society 1997

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References

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