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Variable Temperature Capacitance-Voltage Measurements to Investigate the Density of Localized Trapping Levels in Organic Semiconductors

Published online by Cambridge University Press:  26 February 2011

Naser Sedghi
Affiliation:
nsed@liv.ac.uk, The University of Liverpool, Electrical Engineering and Electronics, Brownlow Hill, Liverpool, N/A, L26 1YQ, United Kingdom, +44 151 7944608
David Donaghy
Affiliation:
d.donaghy@liv.ac.uk, The University of Liverpool, Department of Electrical Engineering and Electronics, United Kingdom
Munira Raja
Affiliation:
m.raja@liv.ac.uk, The University of Liverpool, Department of Electrical Engineering and Electronics, United Kingdom
Samer Badriya
Affiliation:
sambadriya@hotmail.com, The University of Liverpool, Department of Chemistry, United Kingdom
Simon J. Higgins
Affiliation:
shiggins@liv.ac.uk, The University of Liverpool, Department of Chemistry, United Kingdom
Bill Eccleston
Affiliation:
beccle@liv.ac.uk, The University of Liverpool, Department of Electrical Engineering and Electronics, United Kingdom
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Abstract

We have approximated the tail of the Gaussian distribution of states of organic semiconduc-tors with an exponential function. We have used this approach to calculate the carrier concentra-tion in organic materials, and subsequently the charge distribution in the accumulation region of a field effect device and the space-charge capacitance in accumulation mode. Small signal high frequency capacitance-voltage measurements performed at various temperatures show good agreement with this model and the characteristic temperature of the exponential function has been estimated from these measurements based on the theory developed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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