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Uv-Ozone Cleaning of GaAs (100) Surfaces for Device Applications

Published online by Cambridge University Press:  26 February 2011

J. S. Solomon  and
S. R. Smith
J. S. Solomon
Affiliation:
Research Institute, University of Dayton, Dayton, Ohio 45469
S. R. Smith
Affiliation:
Research Institute, University of Dayton, Dayton, Ohio 45469
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Abstract

GaAs (100) substrates were subjected to UV-ozone, wet chemical, and thermal treatments prior to deposition of Ni contact structures. The use of UV-ozone showed marked improvement in the electrical characteristics compared to the wet chemical and thermal treatments alone. The major effect of UV-ozone is the nondestructive removal of carbonous contaminants. Results of C-V and I-V barrier height measurements on Ni contact structures fabricated on the treated surfaces are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 449
Copyright
Copyright © Materials Research Society 1986

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References

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