Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T03:02:48.952Z Has data issue: false hasContentIssue false

UV Laser Ablation of PLZT and PSZT Films

Published online by Cambridge University Press:  01 February 2011

Patrick W Leech
Affiliation:
Patrick.Leech@csiro.au, CSIRO, CMSE, Gate 5, Normanby Road,, Clayton, Victoria, 3168, Australia
Anthony S Holland
Affiliation:
anthony.holland@rmit.edu.au, RMIT University, School of Electrical and Computer Engineering, Melbourne, 3001, Australia
Sharath Sriram
Affiliation:
sharath.sriram@rmit.edu.au, RMIT University, School of Electrical and Computer Engineering, Melbourne, 3001, Australia
Madhu Bhaskaran
Affiliation:
Madhu.Bhaskaran@rmit.edu.au, RMIT University, School of Electrical and Computer Engineering, Melbourne, 3001, Australia
Get access

Abstract

The ablation of strontium-doped lead zirconate titanate (PSZT) and lanthanum-doped lead zirconate titanate (PLZT) films has been examined using a 5 ns pulsed excimer laser. Individual squares were patterned with sides in the range of 10-30 µm using single and multiple pulses. The depth of ablation in PLZT films was higher at all fluences than in PSZT films. The morphology of the etched surfaces has comprised the formation of globules which had diameters of 200-250 nm in PLZT and 1400-1600 nm in PSZT films. The diameter of the globules has been shown to increase with fluence until reaching an approximately constant size at >20 J/cm2 in both types of film. The composition of the films following ablation has been analyzed using x-ray photoelectron spectroscopy (XPS) and energy dispersive x-ray (EDX) spectroscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sanchez, F. Benitez, F. and Varela, M. Vacuum 65, 115 (2002).Google Scholar
2. Mori, Z. Tadokoro, M. Zulhairi, Z. Doi, T. Koba, S. Higo, S. and Hakuraku, Y. Supercond. Sci. Technol. 14, 45 (2001).Google Scholar
3. Eyett, M. Bäuerle, D., Wersing, M. and Thomann, H. J. Appl.Phys. 62(4), 1511 (1987).Google Scholar
4. Zeng, D. W. Li, K. Yung, K.C. H.Chan, L.W. Choy, C.L. and Xie, C. Appl.Phys., A78 415 (2004).Google Scholar
5. Desbiens, J-P. and Masson, P. Sensors and Actuators A 136, 554 (2007).Google Scholar
6. Araujo, E.B. and Eiras, J.A. J.Phys.D:Appl.Phys. 36, 2010 (2003).Google Scholar
7. Sriram, S. Bhaskaran, M. and Holland, A.S. Semicond. Sci.Technol. 21(9), 1236 (2006).Google Scholar
8. Sriram, S. Bharaskaran, M. Holland, A.S. Short, K.T. and Latella, B.A. J.Appl.Phys. 101 104910 (2007).Google Scholar
9. Kandasamy, S. Ghantasala, M. Holland, A.S. Li, Y.X. Bliznyuk, V. Wlodarski, W. and Mitchell, A. Materials Letters 62(3), 370 (2008).Google Scholar
10. Hammer, M. and Hoffmann, M. J.Am.Cer.Soc. 81(12), 3277 (1998).Google Scholar
11. Chen, X.Y. and Liu, Z.G. Appl.Phys. A 69, S523 (1999).Google Scholar
12. Oliveira, V. Conde, O. and Vilar, R. Advanced Engineering Materials 3, 75 (2001).Google Scholar
13. Wang, Z. Jiang, Q. White, G.S. and Richardson, A.K. Smart Mater.Struct. 7, 867 (1998).Google Scholar
14. Zomorrodian, A.R. Messarwi, A. and Wu, N.J. Ceramics International, 25 137 (1999).Google Scholar
15. Veradi, P. Craciun, F. Mirenghi, L. Dinescu, M. and Sandu, V. Appl. Surf. Sci. 138-139 552 (1999).Google Scholar