Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-27T07:59:17.389Z Has data issue: false hasContentIssue false
  • English
  • Français

The Use of Seed Layers in Hot Wire Chemical Vapor Deposition of Microcrystalline Silicon Films

Published online by Cambridge University Press:  01 February 2011

G.A. Zaharias ,
A.H. Mahan ,
R.E.I. Schropp ,
Y. Xu ,
D.L Williamson ,
M.M. Al-Jassim ,
M.J. Romero  and
L.M. Gedvilas
G.A. Zaharias
Affiliation:
Dept. Chem. Engineering, Stanford University, Stanford, CA 94305, USA
A.H. Mahan
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401, USA
R.E.I. Schropp
Affiliation:
Utrecht Univ., Debye Institute, Physics of Devices, 3508 TA Utrecht, The Netherlands
Y. Xu
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401, USA
D.L Williamson
Affiliation:
Dept. of Physics, Colo. School of Mines, Golden, CO 80401, USA
M.M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401, USA
M.J. Romero
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401, USA
L.M. Gedvilas
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401, USA
Get access

Abstract

The effect of thin seed layers on the subsequent growth of thick, high growth rate bulk μc-Si is investigated by XRD, SEM and cross sectional TEM. All layers were deposited by hotwire chemical vapor deposition (HWCVD). When the seed layer as observed by XRD is highly crystalline, made by using high H2 dilution (H2:SiH4 100:1), the amorphous incubation layer typical of μc-Si growth is virtually eliminated. Furthermore, with this seed layer, bulk layer deposition conditions that would otherwise produce highly amorphous material enable a composite film with significant crystallinity. When the seed layer is predominantly amorphous, made using a much lower H2 dilution (10:1), there is evidence that very small crystallites, undetected by XRD, still facilitate immediate nucleation and enable the formation of larger grains in the subsequent bulk layer. In concurrence with other HWCVD results, lowering the filament temperature results in significant improvements in film compactness, photoresponse and grain size, while maintaining significant crystallinity. Such films have been incorporated into high deposition rate solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A16.5
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Yamamoto, K., Yoshimi, M., Tawada, Y., Okamoto, Y., Nakajima, A., and Igari, S., Appl. Phys. A 69 (1999) 179.Google Scholar
[2] Kocka, A. F. J., Vorlicek, V., Stuchlikova, H., Stuchlik, J., Mat. Res. Soc. Symp. Proc. 557, 483 (1999).Google Scholar
[3] Mahan, A.H., Xu, Y., Williamson, D.L., Beyer, W., Perkins, J.D., Vanecek, M., Gedvilas, L.M., and Nelson, B.P., J. Appl. Phys. 90, 5038 (2001).Google Scholar
[4] Mahan, A.H., Xu, Y., Iwaniczko, E., Williamson, D.L., Nelson, B.P., and Wang, Q., J. non-Cryst. Sol., Apr. 2002 (in press).Google Scholar
[5] Nelson, B.P., Xu, Y., Mahan, A.H., Williamson, D.L., and Crandall, R.S., MRS Symp. Proc. 609, A22.8 (2000).Google Scholar
[6] see Rath, J.K., Tichelaar, F.D., and Schropp, R.E.I., MRS Symp. Proc. 557, 573 (1999).for a description of their ‘Poly 1’ material.10.1557/PROC-557-573Google Scholar
[7] Cullity, B.D., Elements of X-Ray Diffration (Addison-Wesley, Reading, MA, 1978).Google Scholar
[8] Schropp, R.E.I., Rath, J.K., and Beyer, W., J. Non-Crystalline Solids 266-269, 190 (2000).Google Scholar
[9] Schropp, R.E.I. Xu, Y., Iwaniczko, E., Zaharias, G.A., and Mahan, A.H., this conference.Google Scholar