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Uniform Quantum Wire and Quantum Dot Arrays by Natural Self-Faceting on Patterned Substrates

Published online by Cambridge University Press:  10 February 2011

Richard Nötzel ,
Jörg Fricke ,
Zhichuan Niu ,
Uwe Jahn ,
Klaus-Jürgen Friedland ,
Manfred Ramsteiner ,
Hans-Peter Schönherr ,
Achim Trampert  and
Klaus H. Ploog
Richard Nötzel
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany, notzel@pdi-berlin.de
Jörg Fricke
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Zhichuan Niu
Affiliation:
Department of Materials Science, Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, California 90089-0241, USA
Uwe Jahn
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Klaus-Jürgen Friedland
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Manfred Ramsteiner
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Hans-Peter Schönherr
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Achim Trampert
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Klaus H. Ploog
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
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Abstract

The combination of self-organized growth on high-index substrates with lithographic patterning and atomic hydrogen assistance allows the fabrication of GaAs quantum wires and quantum dots as well as coupled wire-dot arrays with superior structural and electronic properties by molecular beam epitaxy. The selectivity of patterned growth on high-index substrates differs qualitatively from that on low-index ones thus producing quantum wire and quantum dot structures which fulfill the stringent criteria on the geometrical features to be met for useful devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 121
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Eberl, K., Petroff, P.M., and Demeester, P. (editors), Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates (NATO Advanced Sci. Inst. Ser. E., Vol. 298, Kluwer, Dordrecht, 1995).10.1007/978-94-011-0341-1Google Scholar
2. Nötzel, R., Niu, Z.C., Ramsteiner, M., Schdnherr, H.P., Trampert, A., Ddweritz, L., Ploog, K.H., Nature 392, 56 (1998).10.1038/32127Google Scholar
3. Nötzel, R., Däweritz, L., Ploog, K., Phys. Rev. B 46, 4736 (1992).10.1103/PhysRevB.46.4736Google Scholar
4. Nötzel, R., Eißler, D., Hohenstein, M., Ploog, K., J. Appl. Phys. 74, 431 (1993).10.1063/1.354128Google Scholar
5. Schwoebel, R.L., J. Appl. Phys. 40, 614 (1969).10.1063/1.1657442Google Scholar
6. Nötzel, R., Temmyo, J., Tamamura, T., Appl. Phys. Left. 64, 3557 (1994).10.1063/1.111196Google Scholar
7. Fukui, T. andSaito, H., Jpn. J. Appl. Phys. 29, L483 (1990).10.1143/JJAP.29.L483Google Scholar
8. Morishita, Y., Nomura, Y., Goto, S., Katayama, Y., Appl. Phys. Lett. 67, 2500 (1995).10.1063/1.114438Google Scholar
9. Okada, Y., Sugaya, T., Ohta, S., Fujita, T., Kawabe, M., Jpn. J. Appl. Phys. 34, 238 (1995).10.1143/JJAP.34.238Google Scholar
10. Schönherr, H.P., Fricke, J., Niu, Z.C., Friedland, K.J., Nötzel, R., Ploog, K.H., Appl. Phys. Lett. 72, 566 (1998).10.1063/1.120761Google Scholar
11. Friedland, K.J., Schönherr, H.P., Nötzel, R., Ploog, K.H., submitted to Phys. Rev. B.Google Scholar
12. Nötzel, R., Menniger, J., Ramsteiner, M., Ruiz, A., Schönherr, H.P., Ploog, K.H., Appl. Phys. Lett. 68, 1132 (1996).10.1063/1.115736Google Scholar
13. Nötzel, R., Ramsteiner, M., Menniger, J., Trampert, A., Schönherr, H.P., Däweritz, L., Ploog, K.H., J. Appl. Phys. 80, 4108 (1996).10.1063/1.363281Google Scholar
14. Richter, A., Behme, G., Süptitz, M., Lienau, Ch., Elsässer, T., Ramsteiner, M., Nötzel, R., Ploog, K.H., Phys. Rev. Lett. 79, 2145 (1997).10.1103/PhysRevLett.79.2145Google Scholar
15. Nötzel, R., Ramsteiner, M., Niu, Z.C., Schönherr, H.P., Däweritz, L., Ploog, K.H., Appl. Phys. Lett. 70, 1578 (1997).10.1063/1.118622Google Scholar
16. Nötzel, R., Ramsteiner, M., Niu, Z.C., Däweritz, L., Ploog, K.H., in 1997 IEEE Int. Symp. Compound Semicond., edited by Melloch, M. and Reed, M.A. (IEEE97TH8272, Inst. Phys. PubL., Bristol, 1997) p. 65.Google Scholar
17. Nötzel, R., Jahn, U., Niu, Z.C., Trampert, A., Fricke, J., Schönherr, H.P., Kurth, T., Heitmann, D., Däweritz, L., Ploog, K.H., Appl. Phys. Lett. 72, 2002 (1998).10.1063/1.121246Google Scholar
18. Niu, Z.C., Nötzel, R., Jahn, U., Ramsteiner, M., Schönherr, H.P., Fricke, J., Xiao, Z.B., Däweritz, L., Ploog, K.H., Appl. Phys. A67, 135 (1998).10.1007/s003390050750Google Scholar
19. Fricke, J., NStzel, R., Jahn, U., Schöinherr, H.P., Ddiweritz, L., Ploog, K.H., J. Appl. Phys., in press.Google Scholar
20. Hess, H.F., Betzig, E., Harris, T.D., Pfeiffer, L.N., West, K.W., Science 264, 1740 (1994).10.1126/science.264.5166.1740Google Scholar
21. Marzin, J.Y., Gerard, J.M., Izrael, A., Barrier, D., Bastard, G., Phys. Rev. Lett. 73, 716 (1994).10.1103/PhysRevLett.73.716Google Scholar