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Uniaxial Stress and Zeeman Measurements on the 943 meV Luminescence Band in Silicon

Published online by Cambridge University Press:  25 February 2011

M.C. Carmo ,
K.G. Mcguigan ,
M.O. Henry ,
G. Davies  and
E.C. Lightowlers
M.C. Carmo
Affiliation:
Departamento de Física, Universidade de Aveiro, 3800 Aveiro, Portugal
K.G. Mcguigan
Affiliation:
Physics Department, Dublin City University, Ireland
M.O. Henry
Affiliation:
Physics Department, Dublin City University, Ireland
G. Davies
Affiliation:
King’s College, Physics Department, London WC2R 2LS, UK
E.C. Lightowlers
Affiliation:
King’s College, Physics Department, London WC2R 2LS, UK
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Abstract

The photoluminescence from silicon lightly doped with copper and rapidly quenched from ~ 1100° C is dominated by a vibronic band with zero--phonon lines (ZPL) in the region of 943 meV. We have studied the effect of external fields on the electronic properties of this band and the results are consistent with the luminescence occurring at a defect with Td symmetry. The Zeeman measurements indicate that the luminescence is due to the recombination of excitons in J = 1, J = 2 states with the normal ordering of these levels reversed. This reversal is explained by the different response of these states to hydrostatic strains, and it is also argued that strain at the defect provides the binding potential for the exciton.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 273
Copyright
Copyright © Materials Research Society 1990

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References

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