Batch thermal processing satisfies device requirements for 0.5μm and larger technology nodes for silicon semiconductor manufacturing and continues to satisfy these requirements as feature sizes decrease beyond 0.5μm to 0.35μm. At the transition from 0.35μm to 0.25μm, source/drain (S/D) anneal, TiSi form, and TiSi anneal require rapid thermal processing (RTP) because of improvements in thermal budget, lateral dopant diffusion, and in silicidation, with RTP. RTP and rapid thermal chemical vapor deposition (RTCVD) become enabling technology for devices at 0.25μm and smaller technology nodes.

A cost of ownership (CoO) analysis provides a comparison between the financial impact of alternatives and helps in determining the lowest cost answer for that process, assuming all other process parameters can be met equally by all alternatives. This report analyzes primary cost drivers, their importance within each analysis, and potential for improvements which may cause a significant change in CoO values at 200mm.