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Ultrathin NO/N2O Oxynitride Dielectric For Advanced Flash Memory Application: Single Wafer and Batch Technology

Published online by Cambridge University Press:  10 February 2011

R. Zonca ,
B. Crivelli ,
M. L. Polignano ,
F. Cazzaniga ,
M. Alessandri ,
A. P. Caricato ,
M. Bersani ,
M. Sbetti ,
L. Vanzetti  and
G. C. Xing
...Show all authors
R. Zonca
Affiliation:
STMicroelectronics, 20041 Agrate MI, Italy, Romina.Zonca@STcom
B. Crivelli
Affiliation:
STMicroelectronics, 20041 Agrate MI, Italy, Romina.Zonca@STcom
M. L. Polignano
Affiliation:
STMicroelectronics, 20041 Agrate MI, Italy, Romina.Zonca@STcom
F. Cazzaniga
Affiliation:
STMicroelectronics, 20041 Agrate MI, Italy, Romina.Zonca@STcom
M. Alessandri
Affiliation:
STMicroelectronics, 20041 Agrate MI, Italy, Romina.Zonca@STcom
A. P. Caricato
Affiliation:
INFM-MDM, 20041 Agrate ML, Italy
M. Bersani
Affiliation:
IRST Povo di Trento, Italy
M. Sbetti
Affiliation:
IRST Povo di Trento, Italy
L. Vanzetti
Affiliation:
IRST Povo di Trento, Italy
G. C. Xing
Affiliation:
Applied Materials, Santa Clara, CA.
G. E. Miner
Affiliation:
Applied Materials, Santa Clara, CA.
N. Astici
Affiliation:
Applied Materials, Santa Clara, CA.
S. Kuppurao
Affiliation:
Applied Materials, Santa Clara, CA.
D. Lopes
Affiliation:
Applied Materials, Santa Clara, CA.
S. Nesso
Affiliation:
Applied Materials, Santa Clara, CA.
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Abstract

In this paper a systematic investigation of nitrided oxides obtained by Rapid Thermal Oxidation/Nitridation (RTO/RTN) in AMAT Centura System is reported. Two different aspects were considered: first the comparison between single wafers and batch technology, second the different possible oxide architecture achievable with RTO/RTN system (i.e. RTO + RTN, RTN + RTO, RTN + RTO + RTN). Both morphological and patterned wafers were processed. Physical and chemical characterizations were carried out by means of SIMS, XPS, ELYMAT, AFM and Etching Rate studies. Morphological results were then correlated to electrical data obtained on MOS capacitors. The film obtained performing a NO RTN nitridation of the native oxide followed by a ISSG (In Situ Steam Generation) oxidation exhibited very promising electrical properties that made it an appealing candidate as gate dielectric in CMOS and Flash memories applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 141
Copyright
Copyright © Materials Research Society 2000

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References

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