Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-18T05:59:05.435Z Has data issue: false hasContentIssue false
  • English
  • Français

Ultrathin Low Energy Simox for Low Cost, High Density Applications

Published online by Cambridge University Press:  22 February 2011

Fereydoon Namavar ,
N.M. Kalkhoran  and
A. Cremins
Fereydoon Namavar
Affiliation:
Spire Corporation, Bedford MA 01730-2396
N.M. Kalkhoran
Affiliation:
Spire Corporation, Bedford MA 01730-2396
A. Cremins
Affiliation:
Spire Corporation, Bedford MA 01730-2396
Get access

Abstract

Silicon-on-insulator (SOI) materials made by standard energy (150 to 200 keV) separation by implantation of oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. Since much smaller doses are required, low energy SIMOX (LES) reduces cost, improves radiation hardness, and increases the throughput of any ion implanter. The process can also produce high quality thin SIMOX structures that are of particular interest for fully depleted and submicron device structures. In this paper, we address the formation as well as the material and electrical characterization of LES wafers and compare them with standard SIMOX wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 1053
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Pinizzotto, R.F., Vaandrager, B.L., Matteson, S., Lam, H.W., Malhi, S.D.S., Hamdi, A.H., and McDaniel, F.D., IEEE Trans. Nucl. Sci. NS–30, 1718 (1983).Google Scholar
2 Jaussaud, C., Margail, J., Stoemenos, J., and Bruel, M., Mat. Res. Soc. Symp. Proc. 100, 17 (1988).Google Scholar
3 Celler, G.K., Hemment, P.L.F., West, K.W., and Gibson, J.M., Appl. Phys. Lett. 48, 532 (1986).Google Scholar
4 Namavar, F., Cortesi, E., Buchanan, B., and Sioshansi, P., Proc. 1989 IEEE SOS/SOI Technology Conference, Stateline, NV.Google Scholar
5 Namavar, F., Cortesi, E., Kalkhoran, N.M., Manke, J.M., and Buchanan, B.L., Proc. IEEE 1990 SOS/SOI Technology Conference, Key West, FL.Google Scholar
6 Namavar, F., Cortesi, E., Kalkhoran, N.M., Manke, J.M., Buchanan, B.L., Pinizzotto, R.F., and Yang, H., Proc. 1991 IEEE International SOI Conference, Vail Valley, CO.Google Scholar
7 Namavar, F., Cortesi, E., Buchanan, B., Manke, J.M., and Kalkhoran, N.M., Mat. Res. Soc. Symp. Proc. 235, 109 (1992).Google Scholar
8 Namavar, F., Buchanan, B., and Kalkhoran, N.M., Mat. Res. Soc. Symp. Proc. 284,— (1993).Google Scholar
9 Namavar, F., Final Report No. 10126 for “Ultrathin SOI by Low Energy Oxygen Implantation” submitted by Spire Corporation to U.S. Air Force RADC/TSR, Griffiss Air Force Base, NY, 1993.Google Scholar
10 Namavar, F., Cortesi, E., and Sioshansi, P., Mat. Res. Soc. Symp. Proc. 128, 623 (1989).Google Scholar
11 Namavar, F., Cortesi, E., Pinizzotto, R.F., and Yang, H., Mat. Res. Soc. Symp. Proc. 15, 7 (1990).Google Scholar