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Ultra-Low Energy Ion Implantation of Si into HfO2 and HfSiO-based Structures for Non Volatile Memory Applications

Published online by Cambridge University Press:  01 February 2011

Florence Gloux ,
Pierre-Eugène Coulon ,
Jesse Groenen ,
Sylvie Schamm ,
Gerard Benassayag ,
Beatrice Pecassou ,
Abdelilah Slaoui ,
Bhabani Sahu ,
Marzia Carrada  and
Sandrine Lhostis
...Show all authors
Florence Gloux
Affiliation:
fgloux@cemes.fr, CEMES-CNRS, Université de Toulouse, Toulouse, France
Pierre-Eugène Coulon
Affiliation:
pierre-eugene.coulon@polytechnique.edu, CEMES-CNRS, Université de Toulouse, Toulouse, France
Jesse Groenen
Affiliation:
jesse.groenen@cemes.fr, CEMES-CNRS, Université de Toulouse, Toulouse, France
Sylvie Schamm
Affiliation:
sylvie.schammchardon@cemes.fr, CEMES-CNRS, Université de Toulouse, Toulouse, France
Gerard Benassayag
Affiliation:
gerard.benassayag@cemes.fr, CEMES-CNRS, Université de Toulouse, Toulouse, France
Beatrice Pecassou
Affiliation:
beatrice.pecassou@cemes.fr, CEMES-CNRS, Université de Toulouse, Toulouse, France
Abdelilah Slaoui
Affiliation:
abdelillah.slaoui@iness.c-strasbourg.fr, InESS-CNRS, Strasbourg, France
Bhabani Sahu
Affiliation:
sahu_bhabani@yahoo.com, InESS-CNRS, Strasbourg, France
Marzia Carrada
Affiliation:
Marzia.Carrada@iness.c-strasbourg.fr, United States
Sandrine Lhostis
Affiliation:
sandrine.lhostis@cea.fr, ST Microelectronics, Crolles, France
Caroline Bonafos
Affiliation:
caroline.bonafos@cemes.fr, CEMES-CNRS, Université de Toulouse, Toulouse, France
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Abstract

The fabrication of Si nanocrystals (NCs) in multilayer structures based on HfO2 and alloys for memory applications is carried out using an innovative method, the ultra-low energy (1 keV) ion implantation followed by a post-implantation annealing. Si+ ions are implanted into SiO2 thin layers deposited on top of thin HfO2-based layers. After annealing at high temperature (1050°C), the implantation leads to the formation of a two dimensional array of Si NCs at a distance from the surface larger than expected, due to an anomalous oxidation of the implanted Si. Nevertheless, the best memory windows are obtained at lower thermal budget, when no nanocrystals are present in the layer. This suggests that electrical measurements should always be correlated to structural characterization in order to understand where charge storage occurs.

Keywords

memorydielectricion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G01-07
Copyright
Copyright © Materials Research Society 2010

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