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UHV Model Experiments of Electrochemical Etching of GaAs BY H2O/Br2

Published online by Cambridge University Press:  10 February 2011

O. Henrion
Affiliation:
Hahn-Meitner-Institut, Abteilung CG, Glienicker Straβe 100, 14109 Berlin, Germany
A. Klein
Affiliation:
Hahn-Meitner-Institut, Abteilung CG, Glienicker Straβe 100, 14109 Berlin, Germany
C. Ettenkofer
Affiliation:
Hahn-Meitner-Institut, Abteilung CG, Glienicker Straβe 100, 14109 Berlin, Germany
W. Jaegermann
Affiliation:
Hahn-Meitner-Institut, Abteilung CG, Glienicker Straβe 100, 14109 Berlin, Germany
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Abstract

To investigate the initial steps of GaAs etching Br2 and H2O were (co)adsorbed onto the (110) cleavage plane at 100 K and the interaction investigated by SXPS and LEED. H2O is dissociatively adsorbed at low temperatures and leads to Fermi level pinning close to midgap. Br2 leads, depending on coverage, to the formation of bromides of different stoichiometries. During annealing to 290 K the bromides mostly evaporate from the surface (etching). Br2 and H2O coadsorption leads to Ga-oxide remaining on the surface. For the reactive interfaces band bending is not observed. The results of the adsorption experiments are compared to electrochemically prepared surfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Mukherjee, S.D. and Woodard, D.W. in: Gallium Arsenide: Materials. Devices, and Circuits. Eds. Howes, M. J. and Morgan, D. V., John Wiley & Sons, Chichester, NY, 1985, p. 119 Google Scholar
[2] Kaminska, A.M. and Guziewicz, M., Thin Solid Films 254, p. 194, (1995)Google Scholar
[3] Notten, P.H.L., van den Meerakker, J.E.A.M. and Kelly, J.J.: Etching of IH-V semiconductors: An electrochemical approach. Elsevier Advanced Technology, Oxford, 1991 Google Scholar
[4] Jaegermann, W. in: Modern Aspects of Electrochemistry, Eds. Bockris, J. O., Conway, B. E. and White, R. E., Plenum Press, New York, London, (in press)Google Scholar
[5] Henrion, O., Loner, T., Klein, A., Pettenkofer, C. and Jaegermann, W., Surf. Sci. Lett. 366, L685, 1996 Google Scholar
[6] Cierocki, K., Troost, D., Koenders, L. and Mönch, W., Surf. Sci. 264, p. 23, 1992 Google Scholar
[7] Gu, C., Chen, Y., Ohno, T.R. and Weaver, J.H., Phys. Rev. B 46, p. 10197, 1992 Google Scholar
[8] Mönch, W., J. Vac. Sci. Technol. B 7, p. 1216, 1989 Google Scholar
[9] Alonso, M., Cimino, R. and Horn, K., Phys. Rev. Lett. 64, p. 1947, 1990 Google Scholar
[10] Wilmsen, C.W., J. Vac. Sci. Technol. 19 (1981) 279.Google Scholar
[11] Lu, Z.H., Lagarde, C., Sacher, E., Currie, J.F. and Yelon, A., J. Vac. Sci. Technol. A 7, p. 646, 1989 Google Scholar
[12] Hirota, Y., Sugii, K. and Homma, Y., J. Electrochem. Soc. 138, p. 799, 1991 Google Scholar
[13] Allongue, P. and Cachet, H., Surf. Sci. 168, p. 356, 1986 Google Scholar
[14] Savadogo, O., Can. J. Chem. 67, p. 382, 1989 Google Scholar
[15] Ba, B., Cachet, H., Fotouhi, B. and Gorochov, A., Semicond. Sci. Technol. 9, p. 1529, 1994 Google Scholar