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Two-Dimensional Electronic Structures in Layered Oxychalcogenide Semiconductors, LaCuOCh (Ch=S, Se, Te) and La2CdO2Se2

Published online by Cambridge University Press:  17 March 2011

Toshio Kamiya
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Japan Hosono Transparent Electro-Active Materials Project, ERATO, JST, Japan
Kazushige Ueda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Japan
Hidenori Hiramatsu
Affiliation:
Hosono Transparent Electro-Active Materials Project, ERATO, JST, Japan
Hiromichi Ohta
Affiliation:
Hosono Transparent Electro-Active Materials Project, ERATO, JST, Japan
Masahiro Hirano
Affiliation:
Hosono Transparent Electro-Active Materials Project, ERATO, JST, Japan
Hideo Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Japan Hosono Transparent Electro-Active Materials Project, ERATO, JST, Japan
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Abstract

Electronic structures of layered oxychalcogenides, LaCuOCh (Ch=S, Se, Te) and La2CdO2Se2, were studied using ab-initio band calculations in relation to their optical and electronic properties. It was found that the dispersions of the top valence bands are much smaller in Γ-Z direction than in Γ-X direction, indicating that the electronic structure is highly two-dimensional, and that holes are confined in the CuCh or CdSe layers. The two-dimensional electronic structure is supported experimentally by staircase-like structure observed in optical absorption spectra at 10 K associated with two excitonic absorption peaks split by spin-orbit interaction of Ch ions. La2CdO2Se2has the largest bandgap due to the two-dimensional network structure of CdSe tetrahedra.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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