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Two-Color Picosecond Measurements on Electron-Hole Plasmas Close to the Melting Phase Transition

Published online by Cambridge University Press:  22 February 2011

P.M. Fauchet  and
A.E. Siegman
P.M. Fauchet
Affiliation:
Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305 USA
A.E. Siegman
Affiliation:
Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305 USA
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Abstract

We demonstrate a novel technique to study in detail the picosecond dynamics of semiconductors close to the melting phase transition. A variable-energy IR pulse (1.06 μm) is used to melt Si or GaAs samples via free carrierabsorption (FCA) in the dense and hot electron-hole plasma (EHP) produced by a preceding visible (532 nm) pulse. By varying the delay between the pulses and their relative intensities, we are able to verify the Lietoila-Gibbons model for pulsed laser heating, and to measure in detail important parameters of the EHP over a wide range of experimental conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 63
Copyright
Copyright © Materials Research Society 1984

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References

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