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Two- and three-Dimensional Refractive Index Lattices Formed by Laterally Patterned Porous Silicon Layers

Published online by Cambridge University Press:  10 February 2011

S. Uehara ,
H. Sasabu ,
K Taira ,
T. Hashimoto  and
T. Matsubara
S. Uehara
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan, sue@ee.seikei.ac.jp
H. Sasabu
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan, sue@ee.seikei.ac.jp
K Taira
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan, sue@ee.seikei.ac.jp
T. Hashimoto
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan, sue@ee.seikei.ac.jp
T. Matsubara
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan, sue@ee.seikei.ac.jp
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Abstract

Porous silicon was used to fabricate refractive index lattices. Patterned n-doping and/ or substrate etching were used to introduce lateral periodicity. By anodizing p-type substrate with an n-doped area, we realized large refractive index contrast two-dimensional lattices with underlying cladding layer. The anodization process showed an effect specific to the small dimensional patterning and this effect has significant influence on the formed refractive index structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 597: Symposium PP – Thin Films for Optical Waveguide Devices & Materials … , 1999 , 69
Copyright
Copyright © Materials Research Society 2000

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