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TVS Measurements of Metal Ions in Low-k Dielectrics: Effect of H2O Uptake

Published online by Cambridge University Press:  01 February 2011

Ivan Ciofi ,
Zsolt Tökei ,
Giovanni Mangraviti  and
Gerald Beyer
Ivan Ciofi
Affiliation:
ciofi@imec.be, IMEC, IPSI, Kapeldreef 75, Leuven, B-3001, Belgium
Zsolt Tökei
Affiliation:
zsolt@imec.be, IMEC, Kapeldreef 75, Leuven, B-3001, Belgium
Giovanni Mangraviti
Affiliation:
mangraviti@imec.be, IMEC, Kapeldreef 75, Leuven, B-3001, Belgium
Gerald Beyer
Affiliation:
beyer@imec.be, IMEC, Kapeldreef 75, Leuven, B-3001, Belgium
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Abstract

Drift of metal ions in low-k dielectrics was investigated by Triangular Voltage Sweep (TVS) measurements on planar capacitors with different gate materials: Al, Ta, Ru, Ti, Cu, Pt and a-Si.

Keywords

HCubarrier layer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N05-08
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

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