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Transport Measurements of Individual Bi Nanowires

Published online by Cambridge University Press:  21 March 2011

Stephen B. Cronin ,
Yu Ming Lin ,
Takaaki Koga ,
Jackie Y. Ying  and
Mildred S. Dresselhaus
Stephen B. Cronin
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
Yu Ming Lin
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
Takaaki Koga
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02139
Jackie Y. Ying
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Mildred S. Dresselhaus
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Transport properties are reported for Bi nanowires, prepared by the filling of an alumina template with molten Bi. The temperature dependence of the resistance is presented for such arrays of Bi nanowires with diameters in the 40 to 200nm range. The data are understood qualitatively on the basis of a model for a quantum-confined system. Finally, a 4-point measurement is performed on an individual Bi nanowire prepared by using an electron beam lithography technique. Techniques for handling the practical issues of non-ohmic contacts and wire burn-out are given. The physical significance of the final results of the measurements are discussed in light of various scattering mechanisms in the nanowire.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 582: Symposium H – Molecular Electronics , 1999 , H10.4
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Lin, Y.M., Sun, X., Cronin, S. B., Zhang, Z., Ying, J. Y., and Dresselhaus, M. S., Fabrication and Charactorization of Te-Doped Bi Nanowire Arrays, in MRS Symposium Proceedings, Boston, (1999).Google Scholar
2. Zhang, Z., Ying, J. Y., and Dresselhaus, M. S., J. Mater. Res., 13, 1745 (1998).Google Scholar
3. Zhang, Z., Sun, X., Dresselhaus, M. S., Ying, J. Y., and Heremans, J., Electronic transport properties of single crystal bismuth nanowire arrays, Phys. Rev. B, 60, accepted 10/27/99.Google Scholar
4. Heremans, J., Thrush, C. M., Zhang, Z., Sun, X., Dresselhaus, M. S., Ying, J. Y., and Morelli, D. T., Phys. Rev. B 58, R10091 (1998).Google Scholar
5. Sun, X., Zhang, Z., and Dresselhaus, M. S., Appl. Phys. Lett., 74, 4005 (1999).Google Scholar
6. Dresselhaus, M. S., Lin, Y.-M., Dresselhaus, G., Sun, X., Zhang, Z., Cronin, S.B., Koga, T. and Ying, J. Y., in The 18th International Conference on Thermoelectrics: ICT Symposium Proceedings, Baltimore, (1999).Google Scholar
7. Dresselhaus, M. S., Zhang, Z., Sun, X., Ying, J. Y., Heremans, J., Dresselhaus, G., and Chen, G., in Thermoelectric Materials--The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications: MRS Symposium Proceedings, Boston, edited by Tritt, T. M. and Lyon, H. B. and Mahan, G. and Kanatzidis, M. G. (Mater. Res. Soc. Proc. 545, Pittsburgh, PA, 1999) pp. 215 (1999).Google Scholar
8. Cronin, S., Lin, Y.-M., Koga, T., Sun, X., Ying, J. Y., and Dresselhaus, M. S., in The 18th International Conference on Thermoelectrics: ICT Symposium Proceedings, Baltimore, (1999).Google Scholar