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Transparent Transistors Based on Semiconducting Oxides

Published online by Cambridge University Press:  01 February 2011

Y.W. Kwon ,
Y. Li ,
Y.W. Heo ,
M. Jones ,
Vijay ,
B.S. Jeong ,
J. Zhou ,
S. Li ,
P. Holloway  and
D.P. Norton
Y.W. Kwon
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL 32611, U.S.A.
Y. Li
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL 32611, U.S.A.
Y.W. Heo
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL 32611, U.S.A.
M. Jones
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL 32611, U.S.A.
Vijay
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL 32611, U.S.A.
B.S. Jeong
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL 32611, U.S.A.
J. Zhou
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL 32611, U.S.A.
S. Li
Affiliation:
University of Florida, Dept. of Electrical and Computer Engineering, Gainesville, FL 32611, U.S.A.
P. Holloway
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL 32611, U.S.A.
D.P. Norton
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL 32611, U.S.A.
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Abstract

The synthesis and properties of oxide-based thin film transistors (TFTs) is reported using pulsed laser deposition. The field effect transistors use ZnO as the channel material. Low leakage current density is achieved with amorphous (CeTb)MgAl11O19 (CTMA) serving as the gate oxide, whose dielectric strength is measured to be > 5MV/cm for structures fabricated on Indium Tin oxide (ITO) substrates. Capacitance-voltage properties show that n-type active layers are realized with undoped ZnO. Charge densities in undoped ZnO are measured to be 1018 to 1019 / cm3 using Hall measurement and CV plots. Current-voltage measurements for TFT operation are reported. Channel materials on patterned substrates show high conductance and modulation of channel conductance. C-V measurements with MOS structure using doped ZnO and ZnxMg1-xO will also be described. The properties of depletion mode TFTs fabricated with doped and undoped oxide channel will be discussed in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E6.30
Copyright
Copyright © Materials Research Society 2004

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References

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