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Transparent P-type Conducting LaCuOS Layered Oxysulfide

Published online by Cambridge University Press:  21 March 2011

Kazushige Ueda ,
Shin-ichiro Inoue ,
Sakyo Hirose ,
Hiroshi Kawazoe  and
Hideo Hosono
Kazushige Ueda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, JAPAN
Shin-ichiro Inoue
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, JAPAN
Sakyo Hirose
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, JAPAN
Hiroshi Kawazoe
Affiliation:
R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima 196-8510, JAPAN
Hideo Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, JAPAN
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Abstract

Materials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F2.7
Copyright
Copyright © Materials Research Society 2001

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References

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