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Transmission Electron Microscopy Observation of Constrained Crystallization in a-Si:H/a-SiNx:H Multilayer Film

Published online by Cambridge University Press:  28 February 2011

Xinfan Huang ,
Weihua Shi ,
Kunji Chen ,
Shidong Yu  and
Duan Feng
Xinfan Huang
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China.
Weihua Shi
Affiliation:
National Laboratory for Superlattices and Microstructures, Beijing 100083, China
Kunji Chen
Affiliation:
National Laboratory for Superlattices and Microstructures, Beijing 100083, China
Shidong Yu
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China.
Duan Feng
Affiliation:
Dept. of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China.
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Abstract

The constrained crystallization in a-Si:H/a-SiNx:H multilayer structures by Ar ion laser annealing treatment has been studied by high-resolution transmission electron microscopy (HRTEM) and Raman scattering. HRTEM photograph shows that the a-Si:H layers crystallize without disturbing the multilayer structures and that the interfaces after the crystallization are atomically smooth and uniform. The lattice image of the Si crystallites arrayed one by one can be seen clearly in Si layers and the average size is roughly equal to the thickness of Si layer. The thermodynamics of constrained crystallization within multilayer structures has been discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 839
Copyright
Copyright © Materials Research Society 1995

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References

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