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Transitions of Boron Carbide to B-C-N Thin Film

Published online by Cambridge University Press:  31 January 2011

Ruqiang Bao ,
Zijie Yan  and
Douglas B. Chrisey
Ruqiang Bao
Affiliation:
baor@rpi.edu, Rensselaer Polytechnic Institute, Materials Science, Troy, New York, United States
Zijie Yan
Affiliation:
yanz2@rpi.edu, Rensselaer Polytechnic Institute, Materials Science, Troy, New York, United States
Douglas B. Chrisey
Affiliation:
chrisd@rpi.edu, United States
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Abstract

Boron carbon nitride (B-C-N) thin films are attractive due to their potential as hard coatings and as semiconductors with varying band gap. Both B-C-N (BC0.24N0.24) thin films and boron carbide (B4C) thin films were deposited by radio-frequency magnetron sputtering at room temperature. Also, the transition of boron carbide to B-C-N was studied by bombarding the boron carbide thin film by ∼1 uA/cm2 4 keV N+ ions. The results show that the UV-Vis transmittance of B-C-N thin films is better than that of amorphous boron carbide and both B-C and B-N bonds exist in our B-C-N thin films. The nitrogen in our B-C-N thin films bonded with boron causes the XPS B 1s core level to shift 2 eV from that in the B4C boron carbide thin film. Ion bombardment shows that the N+ ion primarily reacts with boron to form B-N and this reaction causes the environmental change of carbon in the thin film and then the XPS C 1s core level to shift to 283.5 eV from 282.8 eV.

Keywords

nitrideceramicthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1204: Symposium K – Nanotubes and Related Nanostructures-2009 , 2009 , 1204-K05-46
Copyright
Copyright © Materials Research Society 2010

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