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Towards Stabilized 10% Efficiency of Large-Area (> 5000cm2) a-Si/a-SiGe Tandem Solar Cells using High-Rate Deposition

Published online by Cambridge University Press:  17 March 2011

Shingo Okamoto
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd., 1-1 Dainichi-higashimachi, Moriguchi, Osaka 570-8502, Japan
Akira Terakawa
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd., 1-1 Dainichi-higashimachi, Moriguchi, Osaka 570-8502, Japan
Eiji Maruyama
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd., 1-1 Dainichi-higashimachi, Moriguchi, Osaka 570-8502, Japan
Wataru Shinohara
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd., 1-1 Dainichi-higashimachi, Moriguchi, Osaka 570-8502, Japan
Makoto Tanaka
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd., 1-1 Dainichi-higashimachi, Moriguchi, Osaka 570-8502, Japan
Seiichi Kiyama
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd., 1-1 Dainichi-higashimachi, Moriguchi, Osaka 570-8502, Japan
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Abstract

This paper reviews recent progress in large-area a-Si/a-SiGe tandem solar cells in Sanyo. Much effort has been devoted to increasing both the stabilized efficiency and the process throughput. A key issue in increasing the stabilized efficiency is thinner i-layer structure with an improved optical confinement effect. High-rate deposition of the i-layers has been investigated using rf (13.56MHz) plasma-CVD method while keeping the substrate temperature below 200 °C. A high photosensitivity of 106 of a-Si:H films maintain up to the deposition rate (Rd) of 15 Å/s by optimizing hydrogen dilution and other deposition conditions. It is of great importance to utilize the effect of hydrogen dilution which can reduce the incorporation of excess hydrogen in the films. The world's highest conversion efficiency of 11.2% has been achieved for a large-area (8252cm2) a-Si/a-SiGe tandem by combining the optimized hydrogen dilution and other solar cell related technologies.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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