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Topographical Effects Regarding Trench Structures Covered with Rtcvd Sige Thin Films

Published online by Cambridge University Press:  22 February 2011

G. Ritter ,
J. Schlote  and
B. Tillack
G. Ritter
Affiliation:
Institute of Semiconductor Physics, W. Korsing Str. 2, D-15230 Frankfurt (Oder), Germany
J. Schlote
Affiliation:
Institute of Semiconductor Physics, W. Korsing Str. 2, D-15230 Frankfurt (Oder), Germany
B. Tillack
Affiliation:
Institute of Semiconductor Physics, W. Korsing Str. 2, D-15230 Frankfurt (Oder), Germany
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Abstract

The paper presented discusses certain topographical effects being significant for the coverage of nonplanar structures with undoped and doped thin SiGe films. They are essential for new integrated heterojunction Si/SiGe devices. To investigate the coverage of topographical surfaces SiGe layers have been deposited on different trench structures in a Rapid Thermal Low Pressure single wafer CVD reactor (RTCVD) from the system SiH4, GeH4, and H2 using B2H6/ H2 and PH3/ H2 for the in-situ doping, respectively. Various deposition conditions and different film compositions have been used. The results especially the differences of the thickness distribution within trenches and on the surface have been discussed with regard to different CVD models taking into account distinguished reaction mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 507
Copyright
Copyright © Materials Research Society 1994

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References

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