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Titanium Nitride Formation by Low Energy Ar Ion Bombardment and UV-Light Irradiation During Deposition

Published online by Cambridge University Press:  21 February 2011

J.W. Gerlach ,
H. Wengenmair ,
B. Stritzker  and
B. Rauschenbach
J.W. Gerlach
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
H. Wengenmair
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
B. Stritzker
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
B. Rauschenbach
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
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Abstract

Titanium nitride films were produced by a newly developed photon and ion beam assisted deposition system (PHIBAD system). With an electron beam evaporator titanium was deposited on silicon substrates in a controlled nitrogen environment. The growing δ-TiN films were bombarded with argon ions and illuminated with UV-light. The results demonstrate that the impurity content, the nitrogen to titanium ratio of the films, the microstructure and the crystal alignment are changed using UV-light irradiation during ion assisted deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 491
Copyright
Copyright © Materials Research Society 1996

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