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Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Madalina Furis ,
Alexander N. Cartwright ,
Jeonghyun Hwang  and
William J. Schaff
Madalina Furis
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY, 14260, USA
Alexander N. Cartwright
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY, 14260, USA
Jeonghyun Hwang
Affiliation:
Department of Electrical Engineering, Cornell University, Ithaca, NY, 14853USA
William J. Schaff
Affiliation:
Department of Electrical Engineering, Cornell University, Ithaca, NY, 14853USA
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Abstract

We report on detailed temperature dependent, time-resolved photoluminescence (TRPL) studies of Si-doped AlGaN epilayers. In these samples, the Al concentration varies from 25% to 66%. The samples were found to exhibit metallic-like temperature-independent conductivity. The deep level “yellow” emission, whose presence would indicate the existence of a large number of defects associated with growth, Si incorporation, and/or alloy formation, is absent. In addition to emission corresponding to the donor-bound exciton, the PL spectrum exhibits features associated with transitions involving localized carriers. This assignment of the emission mechanisms is based on the activation energies extracted from the temperature dependent photoluminescence (PL) quenching. Specifically, at room temperature the PL spectrum is dominated by transitions involving localized states. The localization energy varied from sample to sample and was observed to be between 115 meV to 200 meV. The PL intensity decay in the lower Al mole fraction epilayers exhibits a slow component associated with the presence of donor-bound excitons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.45
Copyright
Copyright © Materials Research Society 2004

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References

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