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Time Dependence of Current Injection Phenomenon in Nickel-Doped MgO Crystals at High Temperatures*

Published online by Cambridge University Press:  21 February 2011

K. L. Tsang ,
H. T. Tohver  and
Y. Chen
K. L. Tsang
Affiliation:
Solid State Division, Oak Ridge National LaboratoryOak Ridge, Tennessee 37831
H. T. Tohver
Affiliation:
Solid State Division, Oak Ridge National LaboratoryOak Ridge, Tennessee 37831
Y. Chen
Affiliation:
Solid State Division, Oak Ridge National LaboratoryOak Ridge, Tennessee 37831
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Abstract

The electrical conduction mechanisms in MgO:Ni with Pt electrodes at 1473 K are studied over electric field ranges up to ∼10 kV/cm. The current transients induced by pulsed changes of the applied voltage as well as transient shortcircuit currents have been measured and analyzed to yield two electron hole recombination lifetimes of 10 and 250 s. The main features of the results are consistent with the double injection model of the electrical breakdown of MgO at high temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 24: Symposium B – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1983 , 207
Copyright
Copyright © Materials Research Society 1984

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Footnotes

**

University of Alabama-Birmingham, Birmingham,Alabama 35294

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

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