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Three Dimensional Finite Element Simulations of Vertical Dot Correlation in Quantum Dot Superlattice

Published online by Cambridge University Press:  10 February 2011

Y.W. Zhang
Y.W. Zhang*
Affiliation:
Institute of Materials Research and Engineering, National University of Singapore, Singapore, 119260, yw-zhang@imre.org.sg
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Abstract

A three dimensional finite element method is used to simulate the kinetic process of island formation in quantum dot superlattices. Depending on the thickness of spacer layers and interruption time, top layer islands can be fully vertically aligned with the same morphology as the buried islands, or can be partially vertically aligned with increasingly less uniform and regular arrangement, or can be alternately misaligned with increasingly uniform and regular arrangement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 349
Copyright
Copyright © Materials Research Society 2000

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References

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